GT50N322A
F IGBT / TRANSISTOR TO-3PN Ic=50A Vces=600V
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部品番号 : GT50N322A
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パッケージ/ケース : TO-3P-3
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ブランド : Toshiba Semiconductor and Storage
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コンポーネントの分類 : Single IGBTs
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日付シート : GT50N322A データシート (PDF)
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Series : GT50N322
概要 GT50N322A
Featuring a low on-state voltage drop and a high operating temperature, the GT50N322A is well-suited for high-power, high-frequency applications. Its wide operating temperature range of -40 to 125 degrees Celsius and RoHS compliance make it environmentally friendly and suitable for a variety of industrial settings. In addition, this SCR module is built for high reliability and performance, with overvoltage and overcurrent protection features to ensure safe and efficient operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tray | Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V | Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 120 A | Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 156 W | Input Type | Standard |
| Reverse Recovery Time (trr) | 800 ns | Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P(N) |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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