SGH40N60UFDTU
40 Amp 600 Volt 160 Watt TO-3P Insulated Gate Bipolar Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $3.314 | $3.31 |
| 10 | $2.865 | $28.65 |
| 30 | $2.598 | $77.94 |
| 90 | $2.329 | $209.61 |
| 510 | $2.204 | $1,124.04 |
| 1200 | $2.149 | $2,578.80 |
在庫：7,005
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : SGH40N60UFDTU
-
パッケージ/ケース : TO-3P-3
-
Brand : onsemi
-
Components Classification : Single IGBTs
-
日付シート : SGH40N60UFDTU データシート (PDF)
概要 SGH40N60UFDTU
The SGH40N60UFDTU IGBT from ON Semiconductor's UFD series is specially crafted to deliver superior performance with minimal conduction and switching losses. Engineered for applications like motor control and power inverters, this IGBT enables high-speed switching operations while maintaining efficiency. ON Semiconductor's UFD series is trusted for its quality and reliability, making it a preferred choice for industries that demand precision and speed
主な特長
- Reliable operation guarantee
- Suitable for DC/DC converter
- High-density mounting
応用
- Energy
- Agriculture
- Construction
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Tube | Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 160 A | Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 20A |
| Power - Max | 160 W | Switching Energy | 160µJ (on), 200µJ (off) |
| Input Type | Standard | Gate Charge | 97 nC |
| Td (on/off) @ 25°C | 15ns/65ns | Test Condition | 300V, 20A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 60 ns | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3P | Base Product Number | SGH40 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
SG2803J
Trans Darlington NPN 50V 0.5A 18-Pin CDIP Tube
BSC035N04LSGATMA1
TDSON EP style for enhanced performance
BSZ040N04LSGATMA1
Tape and reel packaged N-channel MOSFET transistor with a rating of 40V and 18A, housed in an 8-pin TSDSON EP package
BSZ097N04LSGATMA1
N-Channel MOSFET BSZ097N04LSGATMA1, rated for 40 amps and 40 volts, packaged in PG-TSDSON-8
SGD02N120
Integrated Circuit - N-channel IGBT Component with 1200V Voltage Rating, Capable of Carrying 6
SGH80N60UFDTU
This IGBT chip is configured as an N-channel device, supporting up to 600 Volts and a maximum current of 80 Amperes
SGS5N150UFTU
SGS5N150UFTU is a description of IGBT transistors with the product name SGS10N60RUFD1TU
SGSD200
Darlington Transistors PNP Power Darlington
SGW15N60
Fast IGBT NPT technology 600V 15A transistors
SGW15N120
IGBT 1200V 30A 198W TO247-3
IRLIZ34NPBF
Ideal for various electronic applications requiring high power handling and switching capabilities
IRG4BC20S
IGBT IRG4BC20S TO220 19A
2N4403BU
625mW Power Dissipation
RE1C002ZPTL
SOT-416FL-packaged P-Channel MOSFET capable of tolerating 20 volts and carrying a current of 0.2A, provided in tape and reel packaging
MCH6661-TL-W
Capable of handling up to 900mA continuous current and 800mW power dissipation
SIR626LDP-T1-RE3
High-current N-Channel Power MOSFET
VN10LLS
The VN10LLS MOSFET boasts a power dissipation of 0.9 watts, ensuring efficient performance in various electronic circuits
MMBT2222ALT3G
40V Maximum Voltage
DDTD142JC-7-F
SOT-23 NPN Transistor, 500mA Pre-Biased RL
PN2222ATFR
PN2222ATFR is a TO-92-3 packaged transistor designed for a current gain of 100 at 150mA and a collector current of 1A at 10V