TO247-3

(397)
部品番号 説明 ブランド 在庫 BOM に追加
APT30GN60BG N-Channel Insulated Gate Bipolar Transistor Microchip Technology 7,914
C2M0040120D Wolfspeed C2M0040120D N-channel MOSFET Transistor, 60 A, 1200 V, 3-Pin TO-247 Wolfspeed, Inc 8,290
STW25NM60ND STMICROELECTRONICS - STW25NM60ND - MOSFET Transistor, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V Stmicroelectronics 8,448
APT14M100B APT14M100B is a MOSFET MOS8 with a voltage handling capability of 1000V and a current rating of 14A, housed in a TO-247 package Microchip Technology 7,762
80EPF04 Rectifier Diode Switching 400V 80A 190ns 3-Pin(3+Tab) TO-247AC Siliconix 9,761
IRGP50B60PDPBF Infineon IRGP50B60PDPBF IGBT, 75 A 600 V, 3-Pin TO-247AC Infineon Technologies 6,357
FGH40N6S2D Contact for details Onsemi 6,990
APT65GP60L2DQ2G Advanced IGBT Technology Microchip Technology 7,967
APT45GP120BG Trans IGBT Chip N-CH 1200V 100A 625W 3-Pin(3+Tab) TO-247 Tube Microchip Technology 9,666
APT25GP90BDQ1G RoHS 900V IGBT Transistors FG TO-247 Microchip Technology 9,208
APT5017BVFRG Transistor MOSFET N-channel with 500V rating and 30A current capacity in TO-247 package Microchip Technology 7,730
APT50GN60BDQ2G N-Channel Insulated Gate Bipolar Transistor Microchip Technology 5,080
APT50GN60BG APT50GN60BG is a Field Stop IGBT with ultra low VCE(ON) that operates at 600V Microchip Technology 7,799
AUIRFP4004 Trans MOSFET N-CH Si 40V 350A Automotive 3-Pin(3+Tab) TO-247AC Tube Infineon Technologies 6,879
CLA80MT1200NHB HIGH EFFICIENCY THYRISTOR Ixys Integrated Circuits Division 8,289
KSF30A20B Fast Recovery Diode Kyocera Avx Components Corporation 9,559
AUIRFP4568-E AUIRFP4568-E boasts a voltage rating of 120V to 300V, making it suitable for a wide range of automotive electronic systems Infineon Technologies 7,055
IKW25N120T2FKSA1 IKW25N120T2FKSA1 product description Infineon Technologies 3,894
IKW30N65H5XKSA1 Industry-grade IGBT Transistors Infineon Technologies 5,104
IRFP4768PBF Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm Infineon Technologies 4,985
IDW10G65C5XKSA1 650V 10A SiC Schottky Diode in TO-247 Package Infineon Technologies 4,698
IDW40G120C5BFKSA1 High Current Schottky Diode with 1.2KV Voltage Rating Infineon Technologies 9,116
IDW30G65C5XKSA1 IDW30G65C5XKSA1 is a semiconductor component with a power rating of 650 volts and 30 amps Infineon Technologies 2,884
IGQ75N120S7XKSA1 Trans IGBT Chip N-CH 1200V 154A 630W 3-Pin(3+Tab) TO-247 Tube Infineon Technologies 4,203
IGW30N65L5XKSA1 N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 650 Volts, 85 Amps, TO-247 Package Infineon Technologies 6,026
IGW75N60TFKSA1 IGBTs incorporating low loss technology Infineon Technologies 4,663
IHW25N120E1XKSA1 IGBT Transistor 1200V 50A N-Channel Chip TO-247 Package Infineon Technologies 8,129
IKFW75N60ETXKSA1 Transistors for Industry 14: IGBT Type Infineon Technologies 7,817
IKQ75N120CS6XKSA1 Transistor IGBT Chip suitable for high power applications Infineon Technologies 8,534
IKQ75N120CS7XKSA1 Rail/Tube product IKQ75N120CS7XKSA1 Infineon Technologies 6,458
IKW50N65ET7XKSA1 Infineon IKW50N65ET7XKSA1 IGBT Transistor Infineon Technologies 5,697
IKW50N65RH5XKSA1 The TO-247 packaged IKW50N65RH5XKSA1 IGBT is rated for a voltage of 650V and a current of 80A, with a power dissipation of 305W Infineon Technologies 2,012
IKW50N65EH5XKSA1 Trans IGBT Chip N-CH 650V 80A 275W 3-Pin TO-247 Tube Infineon Technologies 8,128
IKW75N65EH5XKSA1 Transistor Insulated Gate Bipolar Transistor (IGBT) Chip for high voltage applications Infineon Technologies 3,056
IKW75N65ES5XKSA1 TO247-3 197W Power Transistor Infineon Technologies 6,599
IPW60R045P7XKSA1 Description of the Product: This is an N-channel MOSFET with a voltage capacity of 600V and a current handling capability of 61A Infineon Technologies 2,863
IPW60R040C7XKSA1 RoHS compliant for environmentally-friendly operation Infineon Technologies 6,191
IPW60R099C6FKSA1 TO-247 Package Type with 3 Pins and 3 Tabs Infineon Technologies 5,450
IPW60R099CPAFKSA1 TO-247 Tube 3-Pin (3+Tab) Infineon Technologies 7,263
IPW65R080CFDAFKSA1 Automotive-grade N-channel MOSFET capable of handling up to 650V and 43.3A, enclosed in a TO-247 package Infineon Technologies 8,258
IPW65R048CFDAFKSA1 AEC-Q101 650V TO-247-3 Infineon Technologies 9,251
IPW65R150CFDAFKSA1 MOS Power Transistors HV (Equal to or greater than 200V) - Packaged in Rail/Tube Infineon Technologies 9,225
IPW80R280P7XKSA1 0R280P7XKSA1 Trans MOSFET N-CH 800V 17A 3-Pin 3+Tab TO-247 Tube Infineon Technologies 5,870
IXFH150N17T2 Transistor MOSFET with N-type channel, rated for 175V and 150A, in TO-247AD package Ixys Integrated Circuits Division 3,589
IXFH18N90P IXFH18N90P MOSFET, engineered for PolarHV applications, designed to deliver high performance with low on-resistance, rated between 500V to 1.2KV Ixys Integrated Circuits Division 5,723
IXFH24N90P IXFH24N90P is a MOSFET discrete component with a 24A current rating and 900V voltage rating in a TO247AD package Ixys Integrated Circuits Division 5,804
IXFH23N80Q Trans MOSFET N-CH 800V 23A 3-Pin(3+Tab) TO-247AD Ixys Integrated Circuits Division 4,514
IXFH70N30Q3 ROHS TO-247AD MOSFETs IXFH70N30Q3 Ixys Integrated Circuits Division 7,340
IXFH96N15P The IXFH96N15P product features a 96 Amps capacity, can handle up to 150V, and has a low 0.024 Rds value Ixys Integrated Circuits Division 7,128
IXFR32N100P Silicon N-channel power MOSFET with 1KV maximum voltage and 18A continuous drain current Ixys Integrated Circuits Division 3,383

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