|
IXBH12N300
|
Power rating of 160W and current rating of 30A |
Ixys Integrated Circuits Division |
5,166 |
|
|
APT33GF120BRG
|
1200V Non-Punch-Thru IGBT APT33GF120BRG |
Microchip Technology |
6,535 |
|
|
IXBX25N250
|
IGBT Chip featuring Transistor for N-Channel with 2500V, 55A, 300W and 3-Pin(3+Tab) PLUS 247 |
Ixys Integrated Circuits Division |
6,490 |
|
|
IXFH15N80
|
effect transistor 15a id 800v 0.6ohm 1-element n-channel silicon metal-oxide semiconductor fet to-247ad to-247ad 3 pin |
Ixys Integrated Circuits Division |
6,579 |
|
|
SIHG47N60E-E3
|
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC Tube |
Siliconix |
7,784 |
|
|
IRFPS40N50LPBF
|
Power Field-Effect Transistor with 46A I(D) and 500V |
Siliconix |
7,969 |
|
|
IRFPG50PBF
|
N-channel MOSFET,IRFPG50 6.1A 1000V |
Siliconix |
8,140 |
|
|
IRFPF50PBF
|
MOSFET RECOMMENDED ALT 844-IRFPF50 |
Siliconix |
7,462 |
|
|
IRFP460APBF
|
The IRFP460APBF is a N-Channel HEXFET MOSFET with a voltage rating of 500V |
Infineon Technologies |
5,976 |
|
|
IRFP360LCPBF
|
IRFP360LCPBF is a N-channel MOSFET, featuring a TO-247AC package, with a voltage rating of 400V and a current handling capability of 23A |
Siliconix |
7,298 |
|
|
IRFP32N50KPBF
|
N-channel HEXFET MOSFET with a voltage rating of 500V |
Siliconix |
5,239 |
|
|
IRFP250PBF
|
Trans MOSFET N-CH 200V 30A |
Siliconix |
9,883 |
|
|
IRFP254PBF
|
N-channel MOSFET,IRFP254 23A 250V |
Siliconix |
7,775 |
|
|
IRFP22N50APBF
|
N-channel MOSFET,IRFP22N50A 22A 500V |
Siliconix |
7,392 |
|
|
IRFP150PBF
|
IRFP150PBF N-Channel MOSFET, 41 A, 100 V, 3-Pin TO-247AC Vishay |
Siliconix |
8,094 |
|
|
IRFP064PBF
|
N-channel power MOSFET with a voltage rating of 60V and a current rating of 70A |
Siliconix |
7,032 |
|
|
MJW21196G
|
Operating voltage of 250 V |
Onsemi |
9,032 |
|
|
MJW21195G
|
Transistor PNP 250V 16A 200W TO-247 Tube |
Onsemi |
6,948 |
|
|
MJW21193G
|
Transistor PNP 250V 16A TO-247 Rail |
Onsemi |
5,481 |
|
|
MJW1302AG
|
PNP bipolar transistors with 15A current rating and 250V voltage rating |
Onsemi |
6,348 |
|
|
FGH80N60FD2TU
|
TO247 80A 1.8V Field Stop IGBT |
Onsemi |
5,705 |
|
|
FCH023N65S3-F155
|
595 W N-Channel 23 mOhm SuperFET III Mosfet with Long Leads |
Onsemi |
9,732 |
|
|
FGH40N60UFDTU
|
IGBT Transistor Chip, N-Type, 600V, 80A, 290W, 3-Pin (3+Tab), TO-247 Tube |
Onsemi |
7,799 |
|
|
FGH20N60SFDTU
|
IGBT Transistor Component, 600V Voltage Rating, 40A Current Capacity, 165W Power Dissipation, TO-247 Enclosure |
Onsemi |
8,039 |
|
|
MJW18020G
|
Bipolar Power Transistor NPN Planar High Voltage |
Onsemi |
6,097 |
|
|
MJH11022G
|
With its high power handling capabilities, this transistor is suitable for various applications |
Onsemi |
9,409 |
|
|
IRFP254N
|
MOSFET with N-channel configuration capable of handling up to 250 volts and 23 amps |
Vishay |
7,572 |
|
|
IXGH25N250
|
RoHS-compliant 250W power transistors |
Ixys Corporation |
9,572 |
|
|
IRG4PH30K
|
IRG4PH30K Insulated Gate Bipolar Transistor (IGBT) rated at 20A and 1200V in TO247 package |
Infineon Technologies |
5,077 |
|
|
KCF25A20
|
Product Description: Diode Switching 200V 25A 3-Pin(3+Tab) TO-247, code KCF25A20 |
Kyocera Corporation |
5,669 |
|
|
APT30GT60BRG
|
NPT Standard Speed Insulated Gate Bipolar Transistor - APT30GT60BRG |
Microchip Technology |
5,127 |
|
|
C3M0016120D
|
1.2kV 115A 556W 22.3mΩ@75A,15V 3.6V@23mA null TO-247-3 MOSFETs ROHS |
Wolfspeed, Inc |
9,865 |
|
|
G3R40MT12D
|
G3R40MT12D, a Power Field-Effect Transistor, is designed for efficient power management |
Genesic Semiconductor |
6,941 |
|
|
G3R160MT17D
|
SiC MOSFET 1700V 160mohm G3R TO-247-3 |
Genesic Semiconductor |
6,462 |
|
|
SCT3030ALGC11
|
TrenchMOS N-Channel MOSFET made of silicon carbide, designed for high voltage applications with 70A current capability and low 30mOhm resistance |
Rohm Semiconductor |
6,135 |
|
|
C2M0045170D
|
Tube packaging for convenience and protection during transportation |
Wolfspeed, Inc |
6,222 |
|
|
VS-60CPH03PBF
|
TO-247AC-encased rectifier diode switch supporting 300V voltage and 60A current, delivering rapid 55ns response for swift switching applications." |
Siliconix |
6,372 |
|
|
VS-40TPS12APBF
|
SCR with TO-247AC Plastic Package, ROHS Compliant |
Siliconix |
6,724 |
|
|
VS-80CPH03-F3
|
Rectifier components capable of handling 2x40A current at 300V |
Siliconix |
5,675 |
|
|
STW30NM60ND
|
600 Volt Transistor |
Stmicroelectronics |
9,351 |
|
|
SCT2450KEC
|
SCT2450KEC is a SiC-based N-MOSFET transistor featuring a unipolar design, offering a voltage rating of 1 |
Rohm Semiconductor |
6,820 |
|
|
SCT2280KEC
|
ROHM SCT2280KEC N-channel MOSFET Transistor |
Rohm Semiconductor |
7,561 |
|
|
MBR40100PT
|
1 Phase Schottky Rectifier Diode with 2 Elements, rated for 10A current and 100V reverse voltage |
Taiwan Semiconductor Corporation |
5,117 |
|
|
IXFH12N100F
|
Robust design and high current handling capabilities |
Ixys Integrated Circuits Division |
5,167 |
|
|
IXTV03N400S
|
High Voltage Power MOSFET |
Ixys Integrated Circuits Division |
6,083 |
|
|
IXTH7P50
|
500V P-Channel Silicon MOSFET with 7A Drain Current in TO-247AD Package |
Ixys Integrated Circuits Division |
6,304 |
|
|
IHW20N120R3
|
TO-247 package for IHW20N120R3 Insulated Gate Bipolar Transistor |
Infineon Technologies |
5,028 |
|
|
IHW20N120R2
|
IGBT Transistors with Reverse Conducting Capabilities, 1200V 20A |
Infineon Technologies |
9,368 |
|
|
HER3005PT
|
Rectifier Diode HER3005PT features a single phase and two elements, with a current rating of 15A and a peak reverse voltage of 400V |
Taiwan Semiconductor Corporation |
9,889 |
|
|
HFA32PA120C
|
Product HFA32PA120C suggested replacements |
Siliconix |
6,357 |
|
