IRFP9240PBF
|
P-channel MOSFET,IRFP9240 12A 200V |
Siliconix |
9,534 |
|
SIHG80N60E-GE3
|
Power MOSFET with 600V rated drain-source voltage and 30V gate-source voltage in TO-247AC package |
Siliconix |
7,585 |
|
IRFP31N50LPBF
|
500V 31A MOSFET with 180mΩ resistance at 19A and 10V |
Siliconix |
6,936 |
|
IRFP360PBF
|
IRFP360PBF is a MOSFET with a voltage rating of 400V, a current rating of 23A, and a low on-state resistance of 200mΩ at 14A and 10V |
Siliconix |
7,731 |
|
VS-30CPQ100PBF
|
Bulk packaging of 100V 30A Schottky diode VS-30CPQ100PBF |
Siliconix |
7,226 |
|
VS-40CPQ060PBF
|
Low Forward Voltage Drop of 680mV@40A |
Siliconix |
8,607 |
|
VS-30CPQ150PBF
|
Alternative Recommended for Schottky Diodes & Rectifiers 78-VS-30CPQ150-N3 |
Siliconix |
8,105 |
|
VS-80CPQ150PBF
|
VS-80CPQ150PBF Rectifier Diode: This diode efficiently converts alternating current (AC) to direct current (DC), ensuring smooth power flow |
Siliconix |
5,881 |
|
65PQ015
|
65A Schottky Diode in TO-247AC Through Hole Package, Rated for 15V Voltage |
Siliconix |
6,518 |
|
60CPQ150PBF
|
30A, 150V V(RRM), Lead Free, Plastic Package-3 |
Siliconix |
9,348 |
|
40CPQ060PBF
|
Diode rectifier utilizing Schottky design, supporting 60V voltage and 40A current, housed in TO-247AC packaging with 3 pins and a tab |
Siliconix |
8,214 |
|
30CPQ150PBF
|
TO-247AC Packaged Schottky Rectifier Diode, 1-Phase, 2 Element Design, 15A Current, 150V Reverse Voltage, Silicon Material |
Siliconix |
7,680 |
|
30CPQ100
|
Tube packaging Schottky rectifying diode rated at 100V and 30A |
Siliconix |
4,829 |
|
30CPQ100PBF
|
This product is a Schottky rectifier diode operating in 1 phase and incorporating 2 elements |
Siliconix |
7,514 |
|
30CPQ045
|
Description of product 30CPQ045: It's a Schottky rectifying diode intended for Through-Hole Technology (THT) applications |
Siliconix |
5,341 |
|
IRGP4750DPBF
|
IRGP4750DPBF: A high-performance N-channel IGBT chip designed for power applications |
Infineon Technologies |
7,347 |
|
IRGP4650DPBF
|
68W power, 76A current, and 600V voltage rating |
Infineon Technologies |
9,806 |
|
IRG4P254SPBF
|
Three-pin TO-247AC package |
Infineon Technologies |
9,339 |
|
IRGP6690DPBF
|
N-Channel 600V 140A Power Transistor |
Infineon Technologies |
3,961 |
|
IRGP4660DPBF
|
This Infineon IGBT, model IRGP4660DPBF, supports currents of 60 amps and voltages of 600 volts, packaged in a 3-pin TO-247AC format |
Infineon Technologies |
5,515 |
|
VS-63CPQ100-N3
|
Rectifier with Schottky technology for 100V, featuring a 2 x 30A rating |
Siliconix |
9,765 |
|
VS-40CPQ060-N3
|
0V, TO-247AC, Product VS-40CPQ060-N3 description, 4 English expressions |
Siliconix |
5,567 |
|
HFA15PB60PBF
|
The description highlights HFA15PB60PBF as a rectifier with ultrafast diode properties, rated at 15A and 600V |
Infineon Technologies |
5,628 |
|
SIHG73N60E-E3
|
Trans MOSFET N-CH 600V 73A 3-Pin(3+Tab) TO-247AC |
Siliconix |
4,820 |
|
VS-HFA16PA60CPBF
|
TO-247 Hexfreds Rectifiers |
Siliconix |
4,395 |
|
80CPQ150
|
The description of product 80CPQ150, also identified as Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-80CPQ150-N3, is provided below |
Siliconix |
7,752 |
|
40CPQ100
|
Diode sold in tube packaging |
Siliconix |
5,727 |
|
40CPQ060
|
SCHOTTKY RECTIFIER, 40A, 60V, TO-247AD |
Siliconix |
6,041 |
|
IRGP4760PBF
|
IRGP4760PBF: Transistor Insulated Gate Bipolar Transistor (IGBT) with a maximum power dissipation of 325W |
Infineon Technologies |
4,966 |
|
IRGP4690DPBF
|
High power IGBTs rated at 454W, 140A, and 600V in TO-247AC casing, meeting ROHS standards |
Infineon Technologies |
3,178 |
|
VS-80APF12PBF
|
80A 3-Pin Diode Switching 1.2KV TO-247AC Tube |
Siliconix |
7,761 |
|
VS-HFA30PA60C-N3
|
High-Efficiency Diode with Fast Recovery in TO-247AC Package |
Siliconix |
4,461 |
|
VS-30CPQ150-N3
|
Diode Schottky 150V 30A 3-Pin(3+Tab) TO-247AC Tube |
Siliconix |
4,118 |
|
60CPH03PBF
|
Rectifier Diode Switching 300V 60A 55ns 3-Pin(3+Tab) TO-247AC Tube |
Siliconix |
4,652 |
|