SIHG80N60E-GE3
Power MOSFET with 600V rated drain-source voltage and 30V gate-source voltage in TO-247AC package
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部品番号 : SIHG80N60E-GE3
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パッケージ/ケース : TO247AC-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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日付シート : SIHG80N60E-GE3 データシート (PDF)
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Series : SIHG80N60E
概要 SIHG80N60E-GE3
N-Channel 600 V 80A (Tc) 520W (Tc) Through Hole TO-247AC
主な特長
- Improved power cycling reliability ensured
- Reduced electromagnetic interference (EMI)
- Achieves high efficiency in switching modes
応用
- Providing power solutions
- For modern applications
- Enhancing energy efficiency
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | Through Hole | Package / Case | TO-247AC-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 80 A |
| Rds On - Drain-Source Resistance | 26 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 295 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 520 W | Channel Mode | Enhancement |
| Series | E | Brand | Vishay / Siliconix |
| Configuration | Single | Product Type | MOSFET |
| Rise Time | 153 ns | Factory Pack Quantity | 25 |
| Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 239 ns | Typical Turn-On Delay Time | 63 ns |
| Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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