2N7002BKS,115
95 mW power dissipation
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 5 | $0.079 | $0.40 |
| 50 | $0.064 | $3.20 |
| 150 | $0.056 | $8.40 |
| 500 | $0.051 | $25.50 |
| 3000 | $0.047 | $141.00 |
| 6000 | $0.045 | $270.00 |
在庫：9,505
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2N7002BKS,115
-
パッケージ/ケース : TSSOP-6
-
Brand : Nexperia
-
Components Classification : FET, MOSFET Arrays
-
日付シート : 2N7002BKS,115 データシート (PDF)
-
Series : 2N7002BKS
概要 2N7002BKS,115
In conclusion, the 2N7002BKS,115 offers a reliable and compact solution for various electronic designs that require high-performance dual N-channel FETs. Its Trench MOSFET technology, advanced features, and small form factor make it well-suited for a wide range of applications, from power management to signal amplification. Whether used in consumer electronics, industrial automation, or telecommunications, this transistor delivers exceptional performance and efficiency
主な特長
- Compact size for easy integration
- Low power consumption for efficient use
- Suitable for various industrial and commercial applications
応用
- Low threshold voltage
- Ideal for battery-operated devices
- Commonly used in voltage regulation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Type number | 2N7002BKS | Package version | SOT363 |
| Package name | TSSOP6 | Product status | Production |
| Channel type | N | Nr of transistors | 2 |
| VDS [max] (V) | 60 | RDSon [max] @ VGS = 10 V (mΩ) | 1600 |
| RDSon [max] @ VGS = 5 V (mΩ) | 2000 | Tj [max] (°C) | 150 |
| ID [max] (A) | 0.3 | QGD [typ] (nC) | 0.1 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 0.5 | Ptot [max] (W) | 0.445 |
| VGSth [typ] (V) | 1.6 | Automotive qualified | Y |
| Ciss [typ] (pF) | 33 | Coss [typ] (pF) | 7 |
| Date | 2011-01-24 | Packing | SOT363_115 |
| Orderable part number | 2N7002BKS,115 | Chemical content | 2N7002BKS |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2N5886
Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
HGTG12N60A4D
Low power dissipation
2N7002W
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-323 T/R
JANTX2N2907A
JANTX2N2907A is a type of Bipolar Junction Transistor (BJT) specifically designed for small-signal applications
JANTX2N6284
NPN Darlington transistor
BSC022N04LS6ATMA1
High power switching component
BSC052N08NS5ATMA1
80V 95A N-channel Trans MOSFET for Automotive Applications, 8-Pin TDSON EP Package
BSC072N08NS5ATMA1
N-type MOSFET designed for power applications, rated at 80V with a maximum current of 74A, presented in TDSON-8 package
FDPF12N60NZ
20FP Transistor 240W
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
FZ3600R17KE3
FZ3600R17KE3 is an Insulated Gate Bipolar Transistor with N-Channel configuration, capable of handling 4800A I(C) and 1700V V(BR)CES
DTC114YETL
00mA 3-Pin EMT T/R - Tape and Reel
BSM180D12P2C101
RoHS compliant and ready for shipping within one day - Discontinued in 2021
APT60GT60BRG
IGBT chip for power transmission, N-channel, 600 volts, 100 amperes, TO-247 package
IRF3415PBF
43 amp current rating
IXBL60N360
417W 92A 3.6kV - IGBTs ROHS
NTE2920
Product NTE2920 is a ROHS-compliant TO-3P MOSFET with a null voltage of 4V at 250uA, suitable for high-power applications
RU1C001UNTCL
Single-element silicon transistor ideal for implementing as a switch or amplifier in electronic circuits
IXFT50N60P3
N-Channel MOSFET with 600V voltage rating and 50A current rating in TO-268 package
SI4840DY-T1-E3
SI4840DY-T1-E3 is the suggested replacement for SI4840BDY-GE3 MOSFET