IXBL60N360
417W 92A 3.6kV - IGBTs ROHS
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $308.719 | $308.72 |
200 | $123.181 | $24,636.20 |
500 | $119.065 | $59,532.50 |
1000 | $117.031 | $117,031.00 |
在庫:6,863
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IXBL60N360
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パッケージ/ケース : ISOPLUSi5PAC-3
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ブランド : IXYS
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コンポーネントの分類 : Single IGBTs
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日付シート : IXBL60N360 データシート (PDF)
概要 IXBL60N360
The IXBL60N360 BiMOSFETs are power devices that combine the advantages of MOSFETs and IGBTs. With a non-epitaxial construction and innovative fabrication processes, these high voltage devices have proven to be highly effective in various applications. Their ability to operate in parallel is enhanced by the positive voltage temperature coefficient of both saturation voltage and forward voltage drop of the intrinsic diode. Moreover, the built-in body diode acts as a protection mechanism, diverting inductive load current during device turn-off to prevent voltage transients that could potentially damage the device
主な特長
- Rugged mechanical construction
- High vibration tolerance
- Wide operating temperature range
応用
- High voltage testing
- Switched-mode designs
- Uninterruptible power
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Not for New Designs | VCES - Collector-Emitter Voltage (V) | 3600 |
Collector Current @ 25 ℃ (A) | 92 | VCE(sat) - Collector-Emitter Saturation Voltage (V) | 3.4 |
Configuration | Copack (FRED) | Package Type | TO-264I |
Fall Time [Resistive Load] (ns) | 910 | Thermal resistance [junction-case] (K/W) | 0.3 |
Collector Current @ 110 ℃ (A) | 36 | Driving Voltages (V) | 15 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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