2SA2169-TL-E
Trans GP BJT PNP 50V 10A 950mW 3-Pin(2+Tab) DPAK T/R
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $0.880 | $0.88 |
| 10 | $0.730 | $7.30 |
| 30 | $0.656 | $19.68 |
| 100 | $0.581 | $58.10 |
| 700 | $0.538 | $376.60 |
| 1400 | $0.515 | $721.00 |
在庫：8,981
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2SA2169-TL-E
-
パッケージ/ケース : TO-252-3
-
ブランド : onsemi
-
コンポーネントの分類 : Single Bipolar Transistors
-
日付シート : 2SA2169-TL-E データシート (PDF)
概要 2SA2169-TL-E
2SA2169 is a Bipolar Transistor, -50V, -10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Applications.
主な特長
- Multi-level caching system
- High-speed processing technology
- Fully scalable architecture
応用
- LED drivers, audio amplifiers
- Sensor drivers, fan controllers
- Power drivers, servo controllers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Status | Obsolete | Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 10 A | Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 580mV @ 250mA, 5A | Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V | Power - Max | 950 mW |
| Frequency - Transition | 130MHz | Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TP-FA | Base Product Number | 2SA2169 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
2SC4135T-E
PNP-NPN Single TP/TP-FA Bipolar Transistor optimized for high-voltage switching, featuring a voltage rating of -100V and a current rating of -2A
FDMS7602S
Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R
FDMS8672S
With its compact PQFN-8(5x6) package, the FDMS8672S MOSFET provides space-saving solutions without compromising on performance or reliability
IPP60R022S7XKSA1
N-channel 600V 23A Trans MOSFET in tube packaging
2STR1230
00mW Small Signal Transistor
2STF2550
Bipolar Transistors - BJT LV high performance PNP power transistor
2STC5949
Efficient NPN power device for power control and amplificatio
2ST501T
Darlington Transistors for Power Bipolar and Solid-State Signal Amplification"
2ST2121
17A silicon PNP power transistor
2SK3666-3-TB-E
N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package
BFG31,115
BFG31 - PNP transistor for wideband applications in the 5 GHz range
SI5486DU-T1-GE3
Compact N-channel power transistor for V, A applications
MJD340T4G
ON Semiconductor presents the MJD340T4G, a high-voltage NPN bipolar transistor packaged in a 3-pin DPAK
ALD1106PBL
10.6V 4N-channel MOSFET encapsulated in 14DIP package
IXFH42N20
Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins
STP60NE06-16
STP60NE06-16 is a power MOSFET with a maximum current rating of 60A and a voltage rating of 60V, featuring a low on-resistance of 0
DMN2004VK-7
MOSFET 20V 540mA
DMP3020LSS-13
P-Channel MOSFET transistor with a 30V voltage rating and 12A current rating in an SOP package with 8 pins on a reel
SLA4070
Independent Bipolar Junction Power Module Transistor
BSM150GB170DN2
High-Current Dual IGBT Modules with 1700V Voltage Rating