IXFH42N20
Described as a 200V N-channel MOSFET, IXFH42N20 boasts a hefty 42A current capacity and comes in a TO-247AD package with 3 pins
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部品番号 : IXFH42N20
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パッケージ/ケース : TO247-3
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Brand : IXYS
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Components Classification : Single FETs, MOSFETs
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日付シート : IXFH42N20 データシート (PDF)
概要 IXFH42N20
The N-Channel HiPerFET™ Standard series represents a superior choice for engineers and designers seeking high-performance Power MOSFETs for their industrial applications. With a focus on low gate charge and ruggedness, these MOSFETs deliver exceptional performance in both hard switching and resonant mode applications. The fast intrinsic diode further enhances efficiency and reliability, making this series a reliable option for demanding industrial environments. Available in a range of standard industrial packages, including isolated types, these Power MOSFETs offer versatility and convenience for a variety of design and implementation needs
主な特長
- High Speed Switching Capability
- Latching Function
- Self-Recovery Feature
- Overvoltage Protection
応用
- Compact size
- Efficient performance
- Reliable operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.06 |
| Continuous Drain Current @ 25 ℃ (A) | 42 | Gate Charge (nC) | 190 |
| Input Capacitance, CISS (pF) | 4400 | Thermal resistance [junction-case] (K/W) | 0.42 |
| Configuration | Single | Package Type | TO-247 |
| Power Dissipation (W) | 300 | Maximum Reverse Recovery (ns) | 200 |
| Sample Request | No |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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