2SCR502EBTL
With a power dissipation of 0.15W, this NPN transistor can be used in various electronic applications requiring reliable performance
数量 | 単価(USD) | 合計金額 |
---|---|---|
10 | $0.037 | $0.37 |
100 | $0.030 | $3.00 |
300 | $0.026 | $7.80 |
3000 | $0.021 | $63.00 |
6000 | $0.019 | $114.00 |
9000 | $0.018 | $162.00 |
在庫:5,794
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : 2SCR502EBTL
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パッケージ/ケース : SC-89
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Brand : Rohm Semiconductor
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Components Classification : Single Bipolar Transistors
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日付シート : 2SCR502EBTL データシート (PDF)
概要 2SCR502EBTL
Product 2SCR502EBTL is part of a diverse lineup that has been specifically designed with energy-saving and high reliability in mind. The range of products caters to a wide spectrum of needs in the market, offering ultra-compact packages as well as power-packages
主な特長
- 1) Suitable for Middle Power Driver.
- 2) Low VCE(sat)
- VCE(sat)=350mV(Max.).
- (IC/IB=3A/150mA)
- 3) High collector current.
- IC=6A(max),ICP=12A(max)
- 4) Leadless small SMD package (HUML2020L3)
- Excellent thermal and electrical conductivity.
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Status | Active | Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500 mA | Voltage - Collector Emitter Breakdown (Max) | 30 V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 200mA | Current - Collector Cutoff (Max) | 200nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V | Power - Max | 150 mW |
Frequency - Transition | 360MHz | Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | SC-89, SOT-490 |
Supplier Device Package | EMT3F (SOT-416FL) | Base Product Number | 2SCR502 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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