2SK3047
TO-220AB TO-220D-A1 3 PIN
在庫:7,606
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : 2SK3047
-
パッケージ/ケース : TO3FullPack-220
-
ブランド : Panasonic - Bsg
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : 2SK3047 データシート (PDF)
概要 2SK3047
N-Channel 800 V 2A (Tc) 2W (Ta), 30W (Tc) Through Hole TO-220D-A1
主な特長
- Avalanche energy capacity guaranteed: EAS> 15mJ
- VGSS = ±30V guaranteed
- High-speed switching: tf = 25ns
- No secondary breakdown
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Bulk | Product Status | Obsolete |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V | Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA | Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 20 V | Power Dissipation (Max) | 2W (Ta), 30W (Tc) |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | TO-220D-A1 | Package / Case | TO-220-3 Full Pack |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![2SC4135T-E](/files/uploads/product/s/45ebffa15de84476bbccaf1518145409.webp)
2SC4135T-E
PNP-NPN Single TP/TP-FA Bipolar Transistor optimized for high-voltage switching, featuring a voltage rating of -100V and a current rating of -2A
![FDMS7602S](/img/package/dfn.jpg)
FDMS7602S
Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R
![FDMS8672S](/img/package/power33.jpg)
FDMS8672S
With its compact PQFN-8(5x6) package, the FDMS8672S MOSFET provides space-saving solutions without compromising on performance or reliability
![IPP60R022S7XKSA1](/img/package/to220.jpg)
IPP60R022S7XKSA1
N-channel 600V 23A Trans MOSFET in tube packaging
![2STR1230](/img/package/sot23.jpg)
2STR1230
00mW Small Signal Transistor
![2STF2550](/img/package/sot893.jpg)
2STF2550
Bipolar Transistors - BJT LV high performance PNP power transistor
![2STC5949](/img/package/to-3.jpg)
2STC5949
Efficient NPN power device for power control and amplificatio
![2ST501T](/img/package/to220.jpg)
2ST501T
Darlington Transistors for Power Bipolar and Solid-State Signal Amplification"
![2ST2121](/img/package/to-3.jpg)
2ST2121
17A silicon PNP power transistor
![2SK3666-3-TB-E](/img/package/sot23.jpg)
2SK3666-3-TB-E
N-channel Junction Field-Effect Transistor (JFET) with a voltage rating of 30V and a maximum current of 10mA in a 3-pin SC-59 package
![MMBTA42,215](/img/package/sot23.jpg)
MMBTA42,215
Product MMBTA42 is an NPN general-purpose bipolar junction transistor designed for automotive applications
![IPB020N10N5ATMA1](/img/package/d2pak3.jpg)
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
![IRFP460BPBF](/img/package/to247.jpg)
IRFP460BPBF
Vishay IRFP460BPBF N-channel MOSFET Transistor, 20 A, 500 V, 3-Pin TO-247AC
![IPB80N06S2L-05](/img/package/d2pak3.jpg)
IPB80N06S2L-05
Infineon IPB80N06S2L-05 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin TO-263
![XPH4R714MC,L1XHQ](/img/package/sop8.jpg)
XPH4R714MC,L1XHQ
The MOSFET features an EP T/R packaging for easy handling and installation in automotive electronics
![IRFR220TRPBF](/img/package/dpak.jpg)
IRFR220TRPBF
Vishay IRFR220TRPBF N-channel MOSFET Transistor, 4.8 A, 200 V, 3-Pin TO-252
![APT28M120B2](/img/package/to247.jpg)
APT28M120B2
Packaged in a T-MAX tube
![MTD6P10E](/img/package/to252.jpg)
MTD6P10E
Product MTD6P10E is a Si-based power MOSFET designed for power applications
![NTD20N06LG](/img/package/dpak.jpg)
NTD20N06LG
Description: NTD20N06LG is a power MOSFET designed for N-channel operation with a 60V voltage rating and a maximum current handling capability of 20A
![MRFE6VP5300NR1](/img/package/sot6.jpg)
MRFE6VP5300NR1
Advanced MOSFET technology for efficient and reliable performan