APT10M07JVFR
APT10M07JVFR Discrete Semiconductor Module: Leveraging FREDFET MOS5 technology
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $75.554 | $75.55 |
| 200 | $29.240 | $5,848.00 |
| 500 | $28.211 | $14,105.50 |
| 1000 | $27.704 | $27,704.00 |
在庫：7,589
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : APT10M07JVFR
-
パッケージ/ケース : SOT-227-4
-
Brand : Microchip Technology
-
Components Classification : Single FETs, MOSFETs
-
日付シート : APT10M07JVFR データシート (PDF)
概要 APT10M07JVFR
The APT10M07JVFR Power MOS V® stands out as a top-performing MOSFET with advanced features that cater to a wide range of applications. Its low resistance aluminum metal gate structure enables rapid gate signal propagation, surpassing the capabilities of conventional polysilicon gate structures. As a result, this MOSFET offers exceptionally low internal chip equivalent gate resistances (EGR), setting it apart from competitors and ensuring uniform high-speed switching efficiency across the chip
主な特長
- Ultra-low gate charge for high-speed devices
- Rapid switching and reliable operation
- Pulse power solutions for industrial automation
- High-voltage amplifiers for scientific research
- Simplified amplifier design for wireless systems
- Advanced power electronics for electric vehicles
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | POWER MOS V® | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 225A (Tc) | Rds On (Max) @ Id, Vgs | 7mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5mA | Gate Charge (Qg) (Max) @ Vgs | 1050 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21600 pF @ 25 V | Mounting Type | Chassis Mount |
| Supplier Device Package | ISOTOP® | Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | APT10M07 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
APT25GT120BRDQ2G
Trans IGBT Chip N-CH 1200V 54A 347W 3-Pin(3+Tab) TO-247 Tube
BC847QAPNZ
Trans GP BJT NPN/PNP 45V 0.1A 350mW Automotive AEC-Q101 6-Pin DFN-B EP T/R
NDS352AP
0V 0.9A P-Channel SuperSOT MOSFET Transistor
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
APT8011JFLL
APT8011JFLL MOSFET with 800V Power and 4-Pin SOT-227 Configuration
IRFPS37N50APBF
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R
IRFBC40APBF
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB
APT8015JVR
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps
APT28M120B2
Packaged in a T-MAX tube
APT100M50J
APT100M50J represents a discrete semiconductor module utilizing MOSFET components
IRF9Z34NSTRLPBF
D2PAK Package Power MOSFET with 3 Pins and 2 Tabs
SISA72DN-T1-GE3
N-Channel 40V MOSFET
BC847CWT1G
NPN bipolar junction transistor, automotive-grade, with a maximum voltage rating of 45V and a current rating of 0
BUZ901D
Magnatec BUZ901D N-channel MOSFET Transistor, 16 A, 200 V, 3-Pin TO-3
KSC945CGTA
Ammo Packaging NPN Bipolar Junction Transistor, General Purpose, TO-92 Package, 3-Pin Configuration, 50 Volts, 0.15 Amps
FMMT558TA
Transistor PNP 400V 0.15A SOT23
2SC4226-T1-A
Small-sized NPN transistor for RF applications with 12V input voltage
UM6K1NTN
Transistor MOSFET Array
MJD340T4G
ON Semiconductor presents the MJD340T4G, a high-voltage NPN bipolar transistor packaged in a 3-pin DPAK
IRL640SPBF
IRL640SPBF, N-channel MOSFET Transistor, 17 A 200 V, 3-Pin D2PAK