APT38N60BC6
APT38N60BC6 is a high-voltage N-channel MOSFET with a unipolar structure, designed to handle up to 600V and 24A of current
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $31.644 | $31.64 |
| 200 | $12.246 | $2,449.20 |
| 500 | $11.817 | $5,908.50 |
| 1000 | $11.603 | $11,603.00 |
在庫：7,274
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : APT38N60BC6
-
パッケージ/ケース : TO-247-3
-
Brand : Microchip Technology
-
Components Classification : Single FETs, MOSFETs
-
日付シート : APT38N60BC6 データシート (PDF)
概要 APT38N60BC6
The APT38N60BC6 is a family of 600V Superjunction MOSFETs that offers a range of current and package options to suit various application requirements. With its high voltage capability, it is suitable for use in industrial power supplies, motor control, and lighting applications. This MOSFET family delivers high performance and reliability, making it an ideal choice for designers and engineers looking for superior power management solutions. Its versatile current and package options provide flexibility in design and enable optimized performance for specific application needs
主な特長
- Ultra low RDS(on)
- Low gate charge Qg
- Robust avalanche capability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | CoolMOS™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18A, 10V | Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2826 pF @ 25 V | Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | TO-247 [B] | Package / Case | TO-247-3 |
| Base Product Number | APT38N60 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
APT25GT120BRDQ2G
Trans IGBT Chip N-CH 1200V 54A 347W 3-Pin(3+Tab) TO-247 Tube
BC847QAPNZ
Trans GP BJT NPN/PNP 45V 0.1A 350mW Automotive AEC-Q101 6-Pin DFN-B EP T/R
NDS352AP
0V 0.9A P-Channel SuperSOT MOSFET Transistor
APT8015JVFR
High-power single transistor module APT8015JVFR with 800V voltage rating
APT8011JFLL
APT8011JFLL MOSFET with 800V Power and 4-Pin SOT-227 Configuration
IRFPS37N50APBF
Transistor MOSFET N-CH 500V 36A 3-Pin TO-274AA T/R
IRFBC40APBF
Trans MOSFET N-CH 600V 6.2A 3-Pin(3+Tab) TO-220AB
APT8015JVR
Product APT8015JVR is an N-channel MOSFET featuring a maximum voltage of 800 volts and a maximum current of 44 amps
APT28M120B2
Packaged in a T-MAX tube
APT100M50J
APT100M50J represents a discrete semiconductor module utilizing MOSFET components
VN46AFD
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
DMP4013LFG-7
DIODES INC. - DMP4013LFG-7. - MOSFET, AEC-Q101, P-CH, -10.3A, -40V
IRLHS6242TRPBF
EP package for compact footprint
MCU20P10-TP
High-power semiconductor device
IRFS4310PBF
The IRFS4310PBF is a 3-pin D2PAK package transistor with 2 tabs, capable of handling high current loads up to 130A at 100V
SI9933ADY
8-pin SOIC package for easy installation
PMV15ENEAR
PMV15ENEA - 30 V, N-channel Trench MOSFET TO-236 3-Pin
DMN65D8LDW-7
The DMN65D8LDW-7 MOSFETs
IRF7413TRPBF
channel silicon mosfet, 13a current, 30v voltage, 0.011 ohm resistance
SIA445EDJ-T1-GE3
Vishay SIA445EDJ-T1-GE3 P-channel MOSFET Transistor, 12 A, -20 V, 6-Pin PowerPAK SC-70