BCR119S
Pre-Biased Bipolar Transistor
在庫：5,977
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BCR119S
-
パッケージ/ケース : SOT-363-6
-
ブランド : Infineon Technologies
-
コンポーネントの分類 : Bipolar Transistor Arrays, Pre-Biased
-
日付シート : BCR119S データシート (PDF)
概要 BCR119S
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150MHz 250mW Surface Mount PG-SOT363-6-1
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bulk | Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V | Resistor - Base (R1) | 4.7kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 5mA, 5V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | Frequency - Transition | 150MHz |
| Power - Max | 250mW | Mounting Type | Surface Mount |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | Supplier Device Package | PG-SOT363-6-1 |
| Base Product Number | BCR119 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BC847BW,115
Trans GP BJT NPN 45V 0.1A 200mW 3-Pin SC-70 T/R
BCP53T1G
SOT-223 Transistor BCP53T1G, PNP Junction Type with 80V Voltage and 1.5A Current Ratings, Packaged in Tape and Reel
BCW66GLT1G
Trans GP BJT NPN 45V 0.8A 300mW 3-Pin SOT-23 T/R
BCP56-16T1G
A transistor with an NPN configuration capable of handling currents up to 1.0 A and voltages of 80 V
BC857CLT1G
TO-236AB packaged silicon transistor with a single element, suitable for small signal applications
BC856BLT1G
Product BC856BLT1G is a PNP bipolar transistor capable of handling currents up to 100mA and voltages up to 80V
BC847ALT1G
47ALT1G is a 3-Pin SOT-23 packaged Bipolar Transistor with NPN configuration
BC817-40LT1G
NPN Silicon Transistor TO-236 Package
BC817-16LT1G
NPN Bipolar Transistors with 500mA and 50V rating
BC63916-D27Z
NPN Transistor with Medium Power Rating
NDD03N80ZT4G
NDD03N80ZT4G, a 3-pin (2+Tab) DPAK-packaged MOSFET, operates as an N-channel device, facilitating voltage switching tasks with its 800V rating and 2
SIA519EDJ-T1-GE3
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
MTP50P03HDLG
Description: Power MOSFET with -30V voltage rating
SQ2308CES-T1-GE3
SMALL SIGNAL, FET
IRF540NLPBF
IRF540NLPBF is a planar MOSFET designed for applications requiring a minimum voltage of 100V
BUV48CFI
Silicon power transistor with 15A current rating
RSR020P05TL
Low Voltage PCH MOSFET for 4V Operation
SUP85N10-10-E3
High-temperature-rated trench N-channel MOSFET with a 100V voltage tolerance
SUD08P06-155L-E3
DPAK Package Type with 3 Pins and 2 Tabs
IPZ40N04S58R4ATMA1
Field-effect transistor suitable for amplifying signals in systems with voltages between 20V and 40V