SQ2308CES-T1_GE3
High Quality N-Channel MOSFET for Automotive Systems
在庫:6,442
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : SQ2308CES-T1_GE3
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パッケージ/ケース : TO-236-3
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ブランド : Vishay Siliconix
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : SQ2308CES-T1_GE3 データシート (PDF)
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Series : SQ2308CES
概要 SQ2308CES-T1_GE3
Designed for efficiency and reliability, the SQ2308CES-T1_GE3 Small Signal Field-Effect Transistor is a dependable choice for engineers and hobbyists alike. Its N-Channel configuration and Silicon construction make it a versatile component for various electronic applications. The TO-236AB package with 3 pins ensures easy integration into circuit designs while meeting Halogen Free and RoHS compliance standards for environmental safety. Trust the SQ2308CES-T1_GE3 for your next electronics project
主な特長
- Silicon-Gated Power Device
- AEC-Q101 Qualified
- High-Current Capable
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | TrenchFET® | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 150mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 205 pF @ 30 V |
Power Dissipation (Max) | 2W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Grade | Automotive | Qualification | AEC-Q101 |
Mounting Type | Surface Mount | Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 | Base Product Number | SQ2308 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
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