BSC077N12NS3GATMA1
Product BSC077N12NS3GATMA1 is a single N-channel 120-volt power MOSFET with a low on-resistance of 7
在庫:7,616
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- 365日の品質保証
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部品番号 : BSC077N12NS3GATMA1
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パッケージ/ケース : TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : BSC077N12NS3GATMA1 データシート (PDF)
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Series : BSC077N12NS3-G
概要 BSC077N12NS3GATMA1
When it comes to applications requiring high-performance components, the BSC077N12NS3GATMA1 delivers unparalleled results. With its outstanding gate charge x R DS(on) product (FOM), this product leads the industry in terms of efficiency and power management. By reducing the need for paralleling and offering the smallest board-space consumption, this technology simplifies the design process and maximizes the performance of any system it's integrated into
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS 3 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 120 V | Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 98A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 7.7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 110µA | Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 60 V |
Power Dissipation (Max) | 139W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-1 |
Package / Case | TDSON-8 | Base Product Number | BSC077 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 120 V | Id - Continuous Drain Current | 98 A |
Rds On - Drain-Source Resistance | 7.7 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 66 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 139 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Brand | Infineon Technologies |
Configuration | Single | Fall Time | 7 ns |
Forward Transconductance - Min | 40 S | Height | 1.27 mm |
Length | 5.9 mm | Product Type | MOSFET |
Rise Time | 8 ns | Factory Pack Quantity | 5000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 26 ns | Typical Turn-On Delay Time | 15 ns |
Width | 5.15 mm | Part # Aliases | BSC077N12NS3 G SP000652750 |
Unit Weight | 0.003683 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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