BSC096N10LS5ATMA1
High-voltage, high-current MOSFET with low on-resistance
在庫:8,657
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部品番号 : BSC096N10LS5ATMA1
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パッケージ/ケース : TDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : BSC096N10LS5ATMA1 データシート (PDF)
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Series : BSC096N10LS5
概要 BSC096N10LS5ATMA1
With a threshold voltage of 2.0V and a gate charge of 75nC, the BSC096N10LS5ATMA1 power MOSFET provides fast switching characteristics and precise power flow control in electronic circuits. This level of control and efficiency is essential for achieving optimal performance in modern electronic systems where power management is a critical factor
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | BSC096N10 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 9.6mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 36µA | Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 50 V |
Power Dissipation (Max) | 3W (Ta), 83W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TDSON-8-6 |
Package / Case | TDSON-8 | Base Product Number | BSC096 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 72 A |
Rds On - Drain-Source Resistance | 9.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 14.6 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 83 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 5 ns | Forward Transconductance - Min | 22 ns |
Product Type | MOSFET | Rise Time | 3.5 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 4.7 ns | Part # Aliases | BSC096N10LS5 SP001861036 |
Unit Weight | 0.003683 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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