BSZ040N04LSGATMA1
Tape and reel packaged N-channel MOSFET transistor with a rating of 40V and 18A, housed in an 8-pin TSDSON EP package
在庫:9,237
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部品番号 : BSZ040N04LSGATMA1
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パッケージ/ケース : TSDSON-8
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : BSZ040N04LSGATMA1 データシート (PDF)
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Series : BSZ040N04LS-G
概要 BSZ040N04LSGATMA1
The Infineon Technologies BSZ040N04LSGATMA1 power MOSFET is a versatile component that offers high performance for a variety of applications. With its low on-state resistance of 4 mOhm, this transistor ensures efficiency and minimal power loss in demanding high current operations. Its impressive maximum drain current of 200A and continuous drain current of 140A make it ideal for high power requirements in motor control, power supplies, and battery management systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | OptiMOS 3 | Product Status | Active |
FET Type | N-Channel | Technology | Si |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2V @ 36µA | Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 20 V |
Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TSDSON-8 |
Package / Case | TSDSON-8 | Base Product Number | BSZ040 |
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | REACH | Details |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 105 A | Rds On - Drain-Source Resistance | 4.5 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 48 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 69 W |
Channel Mode | Enhancement | Tradename | OptiMOS |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 5.4 ns | Forward Transconductance - Min | 40 S |
Height | 1.1 mm | Length | 3.3 mm |
Product Type | MOSFET | Rise Time | 4.8 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 33 ns |
Typical Turn-On Delay Time | 8.5 ns | Width | 3.3 mm |
Part # Aliases | BSZ040N04LS G SP000388295 | Unit Weight | 0.003966 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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