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IRGP20B60PDPBF

40A current handling capacity and 220W power dissipation capability

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概要 IRGP20B60PDPBF

For engineers and designers seeking a high-power insulated gate bipolar transistor (IGBT) that delivers outstanding performance, the IRGP20B60PDPBF by Infineon Technologies is a standout choice. With a voltage rating of 600V and a current handling capacity of 20A, this IGBT is a reliable and efficient solution for high-power applications such as motor control, industrial drives, and power supplies. Boasting a low on-state voltage drop, the IRGP20B60PDPBF minimizes power losses and increases overall efficiency, while its fast switching speed enables precise control of power flow in switch-mode applications. The IGBT's insulated design provides protection against high voltages and reduces the risk of short circuits, offering peace of mind in demanding industrial environments. What sets the IRGP20B60PDPBF apart is its incorporation of proprietary field-stop trench technology, which reduces switching and conduction losses, thereby enhancing overall performance. Furthermore, its positive temperature coefficient ensures safe and continuous thermal stability. Packaged in a convenient TO-247 format with an easy-to-mount pin configuration, this IGBT is designed with ease of use in mind. Additionally, its RoHS compliance underscores its commitment to environmental responsibility. In summary, the IRGP20B60PDPBF is a high-performance IGBT that excels in power handling, efficiency, and reliable protection features

主な特長

  • The IRGP20B60PDPBF is ideal for high-power switching applications with its compact design and reliable operation.
  • It offers a high power density and low noise performance in motor control and power conversion systems.
  • This IGBT provides a fast turn-on time and low conduction loss for efficient energy conversion and transfer.

応用

  • The IRGP20B60PDPBF is commonly used in applications such as motor control, power supplies, and renewable energy systems
  • It is particularly suitable for high-speed switching and efficient power conversion
  • With its low switching losses and high reliability, this insulated gate bipolar transistor (IGBT) is well-suited for a wide range of industrial and automotive applications

    • 仕様

    以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

    Product Category IGBT Transistors RoHS Details
    Technology Si Package / Case TO-247-3
    Mounting Style Through Hole Configuration Single
    Collector- Emitter Voltage VCEO Max 600 V Collector-Emitter Saturation Voltage 2.35 V
    Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 40 A
    Pd - Power Dissipation 220 W Minimum Operating Temperature - 55 C
    Brand Infineon Technologies Height 20.7 mm
    Length 15.87 mm Product Type IGBT Transistors
    Factory Pack Quantity 400 Subcategory IGBTs
    Width 5.31 mm Unit Weight 1.340411 oz

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    • QAと返品ポリシー

      部品の品質保証: 365 日

      返品・返金：90日以内

      返品・交換：90日以内

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