|
BSZ096N10LS5ATMA1
|
OptiMOSTM5Power-Transistor,100V |
Infineon Technologies |
7,702 |
|
|
BSZ120P03NS3GATMA1
|
Transistor P-channel MOSFET with 30V voltage rating and 11A current capacity in TSDSON EP package for Tape and Reel packaging |
Infineon |
8,093 |
|
|
IAUC100N08S5N043ATMA1
|
Automotive Grade N Channel Power MOSFET |
Infineon |
7,137 |
|
|
BSZ900N20NS3GATMA1
|
High-performance OptiMOS 3 N-Channel MOSFET capable of 200V and 15.2A dimensions |
Infineon Technologies |
6,042 |
|
|
BSZ040N06LS5ATMA1
|
MOSFET MV Power MOS |
Infineon Technologies |
6,161 |
|
|
BSZ099N06LS5ATMA1
|
The BSZ099N06LS5ATMA1 is a N-channel MOSFET transistor optimized for switching tasks, supporting voltages up to 60V and currents up to 11A |
Infineon Technologies |
5,653 |
|
|
BSZ042N06NSATMA1
|
60V N Channel MOSFET with 4.2mΩ resistance at 20A |
Infineon Technologies |
9,990 |
|
|
BSZ0506NSATMA1
|
30 V 40 A 4.4 mOhm |
Infineon Technologies |
7,155 |
|
|
BSZ520N15NS3GATMA1
|
BSZ520N15NS3GATMA1 is a 150V, 21A N-Channel MOSFET with a low on-resistance of 52mΩ at 18A and a threshold voltage of 4V at 35uA |
Infineon Technologies |
5,505 |
|
|
BSZ160N10NS3GATMA1
|
N-channel MOSFET with a maximum voltage rating of 100V and a current rating of 40A, packaged in TSDSON-8 OptiMOS 3 configuration |
Infineon Technologies |
5,812 |
|
|
IPZ40N04S5L-7R4
|
High-Speed, Low-Resistance Power Switch with V and A capabilitie |
INFINEON |
4,174 |
|
|
BSZ146N10LS5ATMA1
|
MV POWER MOS MOSFET |
Infineon Technologies |
6,977 |
|
|
BSZ075N08NS5ATMA1
|
N-Channel MOSFET with 80V Voltage Rating and 73A Current Rating |
Infineon Technologies |
5,071 |
|
|
BSZ068N06NSATMA1
|
High voltage MOSFET with trench technology |
Infineon |
9,461 |
|
|
BSZ065N06LS5ATMA1
|
N-type power metal-oxide-semiconductor field-effect transistor with 60V voltage rating and 14A current rating |
Infineon |
8,569 |
|
|
IPZ40N04S5L2R8ATMA1
|
40V N-Channel Automotive MOSFET with 8-Pin TSDSON EP Package |
Infineon |
5,013 |
|
|
IPZ40N04S5L7R4ATMA1
|
N-channel 40-volt MOSFET with a 40-amp rating, packaged in an 8-pin TSDSON, suitable for high-power applications |
Infineon Technologies |
9,339 |
|
|
BSZ036NE2LSATMA1
|
channel MOSFET, 25V, 40A, TSDSON-8 |
Infineon |
8,804 |
|
|
BSZ086P03NS3GATMA1
|
ROHS-compliant P-channel MOSFET, part number BSZ086P03NS3GATMA1, designed for 30V operation with low resistance characteristics |
Infineon |
7,989 |
|
|
BSZ086P03NS3EGATMA1
|
This MOSFET, part of the OptiMOS P3 series, is a P-channel device rated for -30V and 13 |
Infineon |
8,547 |
|
|
BSZ123N08NS3GATMA1
|
Product Description: MOSFET N-Ch 80V 40A TSDSON-8 OptiMOS 3 |
Infineon Technologies |
8,063 |
|
|
BSZ100N06LS3GATMA1
|
OptiMOS 3 N-channel MOSFET designed for high efficiency in power applications with 60V voltage tolerance |
Infineon Technologies |
6,059 |
|
|
BSZ040N04LSGATMA1
|
Tape and reel packaged N-channel MOSFET transistor with a rating of 40V and 18A, housed in an 8-pin TSDSON EP package |
Infineon Technologies |
9,237 |
|
|
BSZ215CHXTMA1
|
MOSFET N/P-CH 20V 8TSDSON |
Infineon Technologies |
9,348 |
|
|
BSZ018NE2LSATMA1
|
Trench MOSFET for Applications Below 40V |
Infineon Technologies |
7,303 |
|
|
ISZ106N12LM6ATMA1
|
Ideal for DC-DC converters, motor drives, and other high-power applications |
Infineon Technologies |
6,473 |
|
|
BSZ22DN20NS3GATMA1
|
Reliable MOSFET device for high-frequency power conversion and motor control |
Infineon |
8,268 |
|
|
BSZ084N08NS5ATMA1
|
Advanced semiconductor component for reliable power control |
Infineon |
6,197 |
|
|
IAUC100N08S5N031ATMA1
|
Compact and Robust Design for Improved Thermal Management and Performan |
Infineon Technologies |
5,232 |
|
|
BSZ037N06LS5ATMA1
|
High-Voltage MOSFET for Efficient Power Conversi |
Infineon Technologies |
6,144 |
|
|
IPZ40N04S53R1ATMA1
|
High-power switching device for efficient power conversi |
Infineon Technologies |
7,960 |
|
|
IAUC80N04S6N036ATMA1
|
High-power automotive MOSFET for rugged application |
Infineon Technologies |
5,640 |
|
|
IAUC80N04S6L032ATMA1
|
High-power switching device for automotive and industrial u |
Infineon Technologies |
9,106 |
|
|
BSZ019N03LSATMA1
|
Advanced switching device for efficient energy conversio |
Infineon |
6,905 |
|
|
BSZ0904NSIATMA1
|
Ultra-reliable MOSFET for high-performance industrial automatio |
Infineon |
7,799 |
|
|
BSZ065N03LSATMA1
|
Advanced OptiMOS technology enables efficient power transmission" |
Infineon |
6,371 |
|
|
BSZ0501NSIATMA1
|
Low-Power Consumption MOSFET for Efficient DC-DC Conversion |
Infineon Technologies |
9,736 |
|
|
BSZ058N03MSGATMA1
|
Advanced power electronics component featuring low on-resistance, high current handling, and robust thermal managemen |
Infineon |
5,777 |
|
|
BSZ0803LSATMA1
|
High-performance power MOSFET for audio application |
Infineon |
7,149 |
|
|
BSZ0703LSATMA1
|
State-of-the-art MOSFET technology for demanding power systems |
Infineon Technologies |
7,703 |
|
|
BSZ0910LSATMA1
|
High-performance power switching device for demanding applications |
Infineon Technologies |
5,409 |
|
|
BSZ340N08NS3GATMA1
|
High-performance power management for modern device |
Infineon Technologies |
7,232 |
|
|
BSZ100N03MSGATMA1
|
High-Power Electronics Component for Efficient Design |
Infineon Technologies |
5,860 |
|
|
BSZ130N03LSGATMA1
|
High-power N-channel enhancement-mode MOSFET for reliable switching application |
Infineon Technologies |
7,561 |
|
|
IAUC120N04S6N013ATMA1
|
Trans MOSFET N-CH 40V 150A Automotive 8-Pin TDSON EP T/R |
Infineon Technologies |
8,660 |
|
|
IPZ40N04S55R4ATMA1
|
The IPZ40N04S55R4ATMA1 MOSFET is suitable for circuits operating between 20V and 40V." |
Infineon Technologies |
6,041 |
|
|
BSZ0500NSIATMA1
|
40V or lower voltage MOSFET with trench architecture |
Infineon Technologies |
7,122 |
|
|
BSZ033NE2LS5ATMA1
|
Low-voltage Trench MOSFET |
Infineon Technologies |
6,156 |
|
|
IAUZ20N08S5L300ATMA1
|
Trans MOSFET N-CH 80V 20A Automotive AEC-Q101 8-Pin TSDSON EP T/R |
Infineon |
6,584 |
|
|
BSZ076N06NS3GATMA1
|
MOSFET TRENCH 40<-<100V |
Infineon Technologies |
5,560 |
|
