C3M0280090D
MOSFET G3 featuring Silicon Carbide technology, rated for 900V with 280mOhm resistance
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $5.254 | $5.25 |
| 10 | $4.650 | $46.50 |
| 30 | $4.280 | $128.40 |
| 90 | $3.971 | $357.39 |
在庫：9,145
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : C3M0280090D
-
パッケージ/ケース : TO247-3
-
ブランド : Wolfspeed, Inc.
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : C3M0280090D データシート (PDF)
概要 C3M0280090D
The Wolfspeed C3M0280090D is a high-quality Mosfet component designed for power applications. With a N-Channel configuration and a maximum Drain Source Voltage of 900V, this Mosfet is capable of handling continuous drain currents of up to 11.5A. This makes it suitable for a wide range of industrial and automotive applications where high power handling capabilities are required
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | SiC |
| Mounting Style | Through Hole | Package / Case | TO-247-3 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 900 V | Id - Continuous Drain Current | 11.5 A |
| Rds On - Drain-Source Resistance | 280 mOhms | Vgs - Gate-Source Voltage | - 8 V, + 19 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | Qg - Gate Charge | 9.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 54 W | Channel Mode | Enhancement |
| Brand | Wolfspeed | Configuration | Single |
| Fall Time | 7.5 ns | Height | 21.1 m |
| Length | 16.13 mm | Product | Power MOSFETs |
| Product Type | MOSFET | Rise Time | 10 ns |
| Factory Pack Quantity | 30 | Subcategory | MOSFETs |
| Type | Silicon Carbide MOSFET | Typical Turn-Off Delay Time | 17.5 ns |
| Typical Turn-On Delay Time | 26 ns | Width | 5.21 mm |
| Unit Weight | 0.211644 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
C3M0075120D
Transistor MOSFET N-channel Silicon Carbide 1200V 32A
C3M0120065K
Trans MOSFET N-CH Silicon Carbide 650V 22A 4-Pin TO-247
C3M0040120J1
TO-263-7 package MOSFET with 1.2kV voltage rating and 15V gate-source voltage
C3M0045065K
Trans MOSFET N-Channel Silicon Carbide 650V 49A TO-247 Package
C3M0045065J1
Silicon Carbide MOSFET designed for industrial use, with 45mohm resistance, 650V rating in TO-263-7XL package, third generation technology
C3M0350120D
Third Generation Industrial MOSFET
PC3M0045065L
51A 160W 650V MOSFETs ROHS
C3M0160120J
1200V Gen 3 silicon carbide MOSFET featuring 160 milliohm resistance
C3M0065100J
G3 SiC MOSFET with 1000V rating
C3M0120090J
Specifications: 900V, 22A, 155mΩ @ 15A
IXGH32N60C
High-power IGBTs with 600V voltage rating
IRFHM831TRPBF
31trpbf n-channel mosfet transistor 14a 30v 8-pin pqfn
NTMD3P03R2G
Dual P−Channel SOIC−8 Power MOSFET capable of handling 3.05 Amps and operating at -30 Volts
CA3096E
Description of CA3096E Bipolar Transistors
BUK9575-100A
N-Channel Metal-oxide Semiconductor FET
NJVMJD50T4G
The NJVMJD50T4G Bipolar Transistor is designed for applications requiring a voltage rating of 400V and power ratings of 1
MRF6V2300NBR1
MRF6V2300NBR1 - RF MOSFET Transistors VHV6 300W TO272WB4N
BF720T1G
Transistor - General Purpose Bipolar Junction Transistor (NPN) rated for 300V and 0
BSC035N10NS5ATMA1
High-current N-Channel MOSFET
T435-700B-TR
4A Snubberless™ Triacs