CM200DY-24H
7-Pin IGBT Module, 1200V, 200A, N-channel
在庫：6,066
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : CM200DY-24H
-
パッケージ/ケース : Module
-
Brand : Powerex Inc.
-
Components Classification : IGBT Modules
-
日付シート : CM200DY-24H データシート (PDF)
概要 CM200DY-24H
When it comes to high-power applications, the CM200DY-24H is the go-to insulated gate bipolar transistor (IGBT) module. Its advanced design and construction ensure optimal performance and reliability in industrial motor drives, power converters, and renewable energy systems. With a maximum collector current of 200A and a maximum collector-emitter voltage of 1200V, this module is capable of meeting demanding power requirements. Its compact and lightweight design, paired with low thermal resistance, allows for efficient heat dissipation, ensuring long-term reliability. Additionally, the CM200DY-24H is equipped with built-in protection features such as short circuit and overcurrent protection, as well as high-speed switching capability for precise power flow control and efficient energy usage
主な特長
- Pulse width modulation
- High voltage application
- Low noise operation
応用
- Industrial automation
- Motor drives
- Uninterruptible power supplies (UPS)
- Solar inverters
- Wind power converters
- Electric vehicles (EV)
- Battery management systems
- Power supplies
- Renewable energy systems
- Medical equipment
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | IGBTMOD™ | Packaging | Bulk |
| Part Status | Obsolete | Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | Current - Collector (Ic) (Max) | 200 A |
| Power - Max | 1500 W | Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 200A |
| Current - Collector Cutoff (Max) | 1 mA | Input Capacitance (Cies) @ Vce | 40 nF @ 10 V |
| Input | Standard | NTC Thermistor | No |
| Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Chassis Mount |
| Package / Case | Module | Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
CM800DZ-34H
800A Insulated Gate Bipolar Transistor with a 1700V Breakdown Voltage, N-Channel Configuration, and MODULE-10 Form Factor
BCM857DS,135
Trans GP BJT PNP 45V 0.1A 380mW Automotive AEC-Q101 6-Pin TSOP T/R
BCM857BS,115
5V 100mA 2PCSPNP SOT-363
CM1200HC-66H
3300V Voltage Breakdown N-Channel IGBT
CM600E2Y-34H
IGBT Modules for High Voltage Chopper Application
BCM847BS,115
Trans GP BJT NPN 45V 0.1A 300mW Automotive AEC-Q101 6-Pin TSSOP T/R
FCMT080N65S3
Power MOSFET, N-Channel, SUPERFET III, Easy-Drive 650 V, 38 A, 80 mOhm
PMCM4401UNEZ
Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R
CM400HA-28H
N-channel IGBT Module rated at 1.4KV and 400A, designated as CM400HA-28H
CM2400HCB-34N
Insulated Gate Bipolar Transistor, 2400A Collector Current, 1700V Breakdown Voltage, N-Channel, MODULE-9
BTA26-800CW
BTA26-800CW is a TRIAC with a peak current rating of 50mA and holding current of 35mA, along with a maximum voltage rating of 800V
VEC2616-TL-W
Small Signal Field-Effect Transistor, 3A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
APT50M65JFLL
CH 500V 58A 4-Pin SOT-227 Tube
LSIC1MO170E1000
Field-Effect Transistor for High Power
SI4942DY
channel silicon metal-oxide semiconductor fet
DTC143EUBTL
NPN Silicon Bipolar Transistor with 0.1A Collector Current and 50V Breakdown Voltage, RoHS Compliant, in UMT3F Package
MMBT2222A-G
Reach out for more information
IXTP140P05T
-50V rated MOSFET with 140 Amps capacity
MJE340STU
Silicon Epitaxial NPN Bipolar Transistors
IRLR8729TRPBF
High-power switching device for efficient power managemen