VEC2616-TL-W
Small Signal Field-Effect Transistor, 3A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.719 | $0.72 |
200 | $0.278 | $55.60 |
500 | $0.269 | $134.50 |
1000 | $0.264 | $264.00 |
在庫:9,254
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : VEC2616-TL-W
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パッケージ/ケース : 8-SMD
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ブランド : onsemi
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コンポーネントの分類 : FET, MOSFET Arrays
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日付シート : VEC2616-TL-W データシート (PDF)
概要 VEC2616-TL-W
Whether used in power supplies, motor control circuits, or amplifier circuits, the VEC2616-TL-W MOSFET delivers the performance and reliability required for today's most demanding applications. Its robust construction and advanced design make it a top choice for engineers looking to optimize their circuit designs
主な特長
The best suited for DC / DC converter.
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
応用
General-Purpose Switching Device Applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tape & Reel (TR) | Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) | Configuration | N and P-Channel |
FET Feature | Logic Level Gate, 4V Drive | Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A | Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.6V @ 1mA | Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 505pF @ 20V | Power - Max | 1W |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead | Supplier Device Package | SOT-28FL/VEC8 |
Base Product Number | VEC2616 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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