CM400HG-66H
High-Power Insulated Gate Bipolar Transistor for Industrial Applications
在庫:5,037
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部品番号 : CM400HG-66H
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パッケージ/ケース : Module
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ブランド : Mitsubishi Materials U.S.A. Corporation
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コンポーネントの分類 : IGBT Modules
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日付シート : CM400HG-66H データシート (PDF)
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Series : CM400
概要 CM400HG-66H
HIGH POWER SWITCHING USE INSULATED TYPE● IC...................................................................400A● VCES ....................................................... 3300V● High Insulated Type● 1-element in a Pack● AISiC BaseplateAPPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | IGBT Modules | RoHS | N |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 3.3 kV | Collector-Emitter Saturation Voltage | 3.3 V |
Continuous Collector Current at 25 C | 400 A | Gate-Emitter Leakage Current | 500 nA |
Pd - Power Dissipation | 4630 W | Package / Case | Module |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 125 C |
Brand | Mitsubishi Electric | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | SMD/SMT | Product Type | IGBT Modules |
Series | CM400 | Factory Pack Quantity | 2 |
Subcategory | IGBTs | Technology | Si |
保証と返品
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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