DDB6U30N08VR
DDB6U30N08VR: High-power N-Channel Insulated Gate Bipolar Transistor
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $31.817 | $31.82 |
| 200 | $12.313 | $2,462.60 |
| 500 | $11.881 | $5,940.50 |
| 1000 | $11.667 | $11,667.00 |
在庫：5,812
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : DDB6U30N08VR
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パッケージ/ケース : Module
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Brand : Infineon Technologies
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Components Classification : IGBT Modules
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日付シート : DDB6U30N08VR データシート (PDF)
概要 DDB6U30N08VR
IGBT Module Three Phase Inverter with Brake 600 V 26 A 83.5 W Chassis Mount Module
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Package | Bulk | Product Status | Obsolete |
| Configuration | Three Phase Inverter with Brake | Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 26 A | Power - Max | 83.5 W |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 20A | Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 880 pF @ 25 V | Input | Standard |
| NTC Thermistor | Yes | Operating Temperature | -40°C ~ 125°C |
| Mounting Type | Chassis Mount | Package / Case | Module |
| Supplier Device Package | Module |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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