DMN62D0U-7
Transistor N-channel MOSFET with 60V voltage rating and 0.38A current rating in SOT-23 package on tape and reel
数量 | 単価(USD) | 合計金額 |
---|---|---|
10 | $0.045 | $0.45 |
100 | $0.040 | $4.00 |
300 | $0.037 | $11.10 |
3000 | $0.035 | $105.00 |
6000 | $0.033 | $198.00 |
9000 | $0.032 | $288.00 |
在庫:8,389
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : DMN62D0U-7
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パッケージ/ケース : SOT23-3
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ブランド : Diodes Incorporated
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : DMN62D0U-7 データシート (PDF)
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Series : DMN62D0U
概要 DMN62D0U-7
N-Channel 60 V 380mA (Ta) 380mW (Ta) Surface Mount SOT-23-3
主な特長
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 2kV
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 standards for High Reliability
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 380 mA | Rds On - Drain-Source Resistance | 2 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 500 mV |
Qg - Gate Charge | 500 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 590 mW |
Channel Mode | Enhancement | Series | DMN62D0U |
Brand | Diodes Incorporated | Configuration | Single |
Fall Time | 12.5 ns | Forward Transconductance - Min | 1.8 S |
Product Type | MOSFET | Rise Time | 2.5 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 22.6 ns |
Typical Turn-On Delay Time | 2.4 ns | Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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