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FDMS7692

Trans MOSFET N-CH Si 30V 14A 8-Pin PQFN EP T/R

在庫：8,334

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迅速な見積もり

見積もりリクエストを送信してください FDMS7692 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDMS7692

The FDMS7692 is a high-performance N-Channel MOSFET that is tailored for DC/DC converters, offering improved efficiency and reduced switch node ringing. It is compatible with both synchronous and conventional switching PWM controllers, making it versatile for various applications. With its optimized design for low gate charge, low rDS(on), fast switching speed, and enhanced body diode reverse recovery performance, it ensures reliable and efficient operation in power management systems

主な特長

  • Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID= 13 A
  • Max rDS(on) = 13 mΩ at VGS = 4.5 V, IDS= 10 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

応用

  • This product is general usage and suitable for many different applications.

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series FDMS7692 Product Status Active
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 14A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 27W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6)
Package / Case Power-56-8 Base Product Number FDMS76
Manufacturer onsemi Product Category MOSFET
RoHS Details REACH Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 6.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 15 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 27 W
Channel Mode Enhancement Tradename PowerTrench
Brand onsemi / Fairchild Configuration Single
Fall Time 2.3 ns Height 1.1 mm
Length 6 mm Product Type MOSFET
Rise Time 2.7 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type Power Trench MOSFET Typical Turn-Off Delay Time 17 ns
Typical Turn-On Delay Time 8 ns Width 5 mm
Unit Weight 0.002402 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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