FDMS86101
Power MOSFET with N-channel configuration, designed for operation at 100V voltage, capable of carrying currents up to 12
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $1.268 | $1.27 |
10 | $1.073 | $10.73 |
30 | $0.966 | $28.98 |
100 | $0.847 | $84.70 |
500 | $0.735 | $367.50 |
1000 | $0.711 | $711.00 |
在庫:7,519
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FDMS86101
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パッケージ/ケース : Power-56-8
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FDMS86101 データシート (PDF)
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Series : FDMS86101
概要 FDMS86101
The FDMS86101 utilizes an advanced Power Trench® process to minimize on-state resistance without compromising switching performance. This unique manufacturing approach results in a high-quality N-Channel MOSFET that is ideal for demanding applications. Whether used in power supplies, motor controls, or other industrial systems, this MOSFET delivers the performance and reliability that engineers require
主な特長
- High efficiency and low rDS(on)
- Advanced package for high power density
- Compact design for space-limited applications
応用
- Great for all environments
- Perfect for daily use
- Suitable for various needs
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | Power-56-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 100 V | Id - Continuous Drain Current | 12.4 A |
Rds On - Drain-Source Resistance | 8 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 55 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
Tradename | PowerTrench | Series | FDMS86101 |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 7 ns | Height | 1.1 mm |
Length | 6 mm | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 27 ns | Typical Turn-On Delay Time | 15 ns |
Width | 5 mm | Unit Weight | 0.002402 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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