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DMN63D8LDW-7

The DMN63D8LDW-7 package is designed for use in various electronic circuits requiring efficient power management and voltage regulation

数量 単価(USD) 合計金額
10 $0.042 $0.42
100 $0.037 $3.70
300 $0.035 $10.50
3000 $0.027 $81.00
6000 $0.026 $156.00
9000 $0.025 $225.00

在庫：8,113

*価格は参考値です。
  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
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迅速な見積もり

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概要 DMN63D8LDW-7

The DMN63D8LDW-7 is a MOSFET component designed for automotive applications, meeting the AEC-Q101 qualification standard for quality and reliability. With a dual N-channel configuration and a continuous drain current rating of 260mA, this MOSFET offers high performance in a compact SOT-363 package. The 30V drain-source voltage and 2.8ohm on-resistance ensure efficient power handling, while the 400mW power dissipation rating allows for reliable operation in demanding conditions. The threshold voltage of 1.5V and low on-resistance make this MOSFET suitable for a variety of switching and amplification tasks, providing versatility in automotive electronics design

主な特長

  • Low On-Resistance: RDS(ON)
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 2kV
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 standards for High Reliability

応用

SWITCHING
Diodes Incorporated Inventory

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 260 mA Rds On - Drain-Source Resistance 2.8 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Qg - Gate Charge 870 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 400 mW
Channel Mode Enhancement Series DMN63D8
Brand Diodes Incorporated Configuration Dual
Fall Time 6.3 ns Forward Transconductance - Min 80 mS
Product Type MOSFET Rise Time 3.2 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 12 ns
Typical Turn-On Delay Time 3.3 ns Unit Weight 0.000265 oz

保証と返品

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  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

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