DMP3160L
The description of DMP3160L highlights it as a MOSFET operating in P-channel enhancement mode
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 10 | $0.067 | $0.67 |
| 100 | $0.055 | $5.50 |
| 300 | $0.049 | $14.70 |
| 3000 | $0.039 | $117.00 |
| 6000 | $0.036 | $216.00 |
| 9000 | $0.034 | $306.00 |
在庫：7,148
- 90日間のアフター保証
- 365日の品質保証
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部品番号 : DMP3160L
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パッケージ/ケース : SOT23
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ブランド : diodes incorporated
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コンポーネントの分類 : Single FETs, MOSFETs
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日付シート : DMP3160L データシート (PDF)
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Series : DMP3160
概要 DMP3160L
Introducing the DMP3160L MOSFET – a game-changing innovation that raises the bar for power management solutions. Engineered to reduce on-state resistance and maximize switching performance, this state-of-the-art device is tailor-made for high-efficiency applications where performance is non-negotiable. With its superior design and cutting-edge technology, the DMP3160L promises unmatched efficiency and reliability for all your power management needs
主な特長
- Wide Operating Range
- High Current Handling
- Fast Switching Times
- Low Power Losses
応用
- High efficiency design
- Regulated output voltage
- Short circuit protection
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | MOSFET | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | SOT-23-3 |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 2.7 A |
| Rds On - Drain-Source Resistance | 122 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.08 W | Channel Mode | Enhancement |
| Series | DMP3160 | Brand | Diodes Incorporated |
| Configuration | Single | Height | 1 mm |
| Length | 2.9 mm | Product | MOSFET Small Signals |
| Product Type | MOSFET | Subcategory | MOSFETs |
| Transistor Type | 1 P-Channel | Width | 1.3 mm |
| Unit Weight | 0.000282 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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