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DTC144EUAT106

Bipolar transistors pre-biased DIGIT NPN 50V 100MA SOT-323

数量 単価(USD) 合計金額
20 $0.018 $0.36
200 $0.016 $3.20
600 $0.014 $8.40
3000 $0.013 $39.00
9000 $0.013 $117.00
21000 $0.012 $252.00

在庫：6,691

*価格は参考値です。
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迅速な見積もり

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概要 DTC144EUAT106

With a maximum continuous current Ic of 100mA and a DC collector current of 100mA, this transistor has a DC current gain hFE of 68hFE. The gain bandwidth is typically 250MHz, with a minimum hfe of 68. Operating temperatures range from -55°C to +150°C, making it suitable for a variety of environments. The power dissipation Pd is 200mW, and the termination type is a surface mount device with a SOT-323 case style. This NPN transistor is designed for general purpose use and has a transition frequency of 250MHz

主な特長

  • 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
  • 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
  • 3) Only the on/off conditions need to be set for operation, making the device design easy.

応用

AMPLIFIER

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Pbfree Code Yes Rohs Code Yes
Part Life Cycle Code Not Recommended Ihs Manufacturer ROHM CO LTD
Part Package Code SC-70 Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3 Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer ROHM Semiconductor
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 Collector Current-Max (IC) 0.03 A
Collector-Emitter Voltage-Max 50 V Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 68 JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Surface Mount YES
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10 Transistor Application AMPLIFIER
Transistor Element Material SILICON Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.3 V

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    部品の品質保証: 365 日

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