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STF15NM60N

N-channel MOSFET with 600V voltage rating and TO-220FP package for easy mounting and installation

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概要 STF15NM60N

The STF15NM60N power MOSFET, manufactured by STMicroelectronics, is specifically designed for high-voltage applications in power supply and industrial systems. With a 600V drain-source voltage rating and a low on-state resistance of about 0.19 ohms, this MOSFET is well-equipped to handle high voltage loads while minimizing power losses, making it suitable for power conversion applications. Powered by STMicroelectronics' advanced SuperMESH™ technology, the STF15NM60N offers enhanced switching performance and thermal characteristics for reliable operation, even in high-temperature environments. The TO-220 package provides easy mounting and effective thermal dissipation, while the built-in protection features, such as overcurrent and overtemperature protection, ensure its robustness in demanding conditions

主な特長

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 299 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 30 W
Channel Mode Enhancement Series STB15NM60
Brand STMicroelectronics Configuration Single
Fall Time 30 ns Height 9.3 mm
Length 10.4 mm Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 80 ns Typical Turn-On Delay Time 12 ns
Width 4.6 mm Unit Weight 0.068784 oz

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    部品の品質保証: 365 日

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