• packageimg
packageimg

FDS2734

Trans MOSFET N-CH 250V 3A 8-Pin SOIC T/R

在庫：6,762

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください FDS2734 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 FDS2734

The FDS2734 is a high-quality MOSFET transistor with N Channel polarity, designed for demanding applications with a Drain Source Voltage (Vds) rating of 250V and a Continuous Drain Current (Id) of 3A. Its low On Resistance (Rds(on)) of 0.117ohm at a test voltage of 3V ensures efficient power handling and minimal heat dissipation. With a Threshold Voltage (Vgs) of 20V, this transistor provides ample headroom for reliable operation. Furthermore, its RoHS compliance underscores its commitment to environmental responsibility, making it a suitable choice for eco-conscious projects

主な特長

  • FDS27 is a high-power MOSFET transistor, suitable for power supply and motor control applications
  • It can handle up to 75V voltage and 5A current, with low on-resistance and fast switching speed
  • Its compact design makes it ideal for use in high-performance electronic devices

応用

  • Robust automotive applications
  • Enhanced current handling
  • Low on-resistance design

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Series UltraFET™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 117mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 100 V
Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) Base Product Number FDS27

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

FQU1N60CTU

FQU1N60CTU

N-Channel MOSFET with 600V maximum voltage and 1A current rating in 3-Pin IPAK package
DMN62D0U-13

DMN62D0U-13

MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DSS4320T-7

DSS4320T-7

20V 600mW 220 at 1A, 2V 2A
HGT1S20N60C3S9A

HGT1S20N60C3S9A

The HGT1S20N60C3S9A is a high-performance N-Channel IGBT, capable of handling 45A at 600V
FF200R33KF2C

FF200R33KF2C

High-powered dual IGBT modules reaching 3300V and 200A
FC6943010R

FC6943010R

FC6943010R, Dual N-channel MOSFET Transistor, 0.1 A 30 V Depletion, 6-Pin SSMini6 F3 B
BCW68HTA

BCW68HTA

BCW68HTA is a medium power transistor with a voltage rating of 45V, capable of handling currents up to 0
IRF644PBF

IRF644PBF

IRF644PBF is an N-Channel MOSFET capable of handling 250 volts and 14 amps, packaged in TO220AB
MMBFU310LT1

MMBFU310LT1

This N-Channel JFET device is ideal for high frequency amplifiers and oscillators
ZXM64N035L3

ZXM64N035L3

ZXM64N035L3 is described as a N-Channel MOSFET with a 35V rating