FF450R17IE4
IGBT Modules with 1700V and 450A
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $467.682 | $467.68 |
30 | $448.716 | $13,461.48 |
在庫:7,831
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : FF450R17IE4
-
パッケージ/ケース : Module
-
Brand : Infineon Technologies
-
Components Classification : IGBT Modules
-
日付シート : FF450R17IE4 データシート (PDF)
概要 FF450R17IE4
Infineon Technologies' FF450R17IE4 power module is designed for a range of applications including motor control, renewable energy systems, and industrial automation. Its high power density and efficiency make it a top choice for applications requiring high switching frequencies and low losses. Equipped with built-in protection mechanisms such as overcurrent and overtemperature protection, the module ensures safe operation and prevents damage. Its robustness and reliability make it suitable for harsh operating conditions, providing peace of mind for users
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Package | Tray | Product Status | Active |
Configuration | 2 Independent | Voltage - Collector Emitter Breakdown (Max) | 1700 V |
Current - Collector (Ic) (Max) | 620 A | Power - Max | 2800 W |
Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 450A | Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 36 nF @ 25 V | Input | Standard |
NTC Thermistor | Yes | Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount | Package / Case | Module |
Supplier Device Package | Module | Base Product Number | FF450R17 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![FF11MR12W1M1B11BOMA1](/img/package/module.jpg)
FF11MR12W1M1B11BOMA1
FF11MR12W1M1B11BOMA1 EasyDUAL Module with CoolSiC™ Mosfet
![FF150R12ME3G](/img/package/module.jpg)
FF150R12ME3G
The FF150R12ME3G IGBT module delivers a power output of 695W and can manage currents of up to 200A at 1
![FF200R12KT3](/img/package/module.jpg)
FF200R12KT3
ROHS certified Gate Drive ICs - FF200R12KT3
![FF23MR12W1M1B11BOMA1](/img/package/module.jpg)
FF23MR12W1M1B11BOMA1
Transistor Module
![FF300R12MS4](/img/package/module.jpg)
FF300R12MS4
High Current N-Channel IGBT Module rated at 1.2KV
![FF600R07ME4B11BOSA1](/img/package/module.jpg)
FF600R07ME4B11BOSA1
MEDIUM POWER ECONO IGBT Modules
![FFB2227A](/img/package/sc70.jpg)
FFB2227A
Trans GP BJT NPN/PNP 30V 0.5A 6-Pin SC-70 T/R
![FFB3904](/img/package/sc70.jpg)
FFB3904
Trans GP BJT NPN 40V 0.2A 300mW 6-Pin SC-70 T/R
![ZXMP2120FFTA](/img/package/sot23f.jpg)
ZXMP2120FFTA
The ZXMP2120FFTA MOSFET is a P-channel device suitable for various applications
![ZXTN07045EFFTA](/img/package/sot233.jpg)
ZXTN07045EFFTA
5V 4A SOT23F, PK
![SIB452DK-T1-GE3](/img/package/sc75.jpg)
SIB452DK-T1-GE3
Vishay SIB452DK-T1-GE3 N-channel MOSFET Transistor, 0.67 A, 190 V, 6-Pin SC-75
![IRF6609](/img/package/mt200.jpg)
IRF6609
0 milliohm N-Channel MOSFET and 46 nanocoulomb capacity
![FF800R12KF4](/img/package/module.jpg)
FF800R12KF4
800A Insulated Gate Bipolar Transistor with 1200V V(BR)CES
![IRF640SPBF](/img/package/d2pak3.jpg)
IRF640SPBF
High-power N-channel MOSFET capable of handling 18A current at 200V voltage
![BUB323ZG](/img/package/d2pak3.jpg)
BUB323ZG
NPN Darlington Bipolar Power Transistor (BUB323ZG)
![IRF1310NSPBF](/img/package/to252.jpg)
IRF1310NSPBF
N-Channel Power MOSFET with 100V Voltage Rating
![RFD8P05](/img/package/to251.jpg)
RFD8P05
Power P-Ch MOSFET TO-251AA
![SCT2120AFC](/img/package/to220.jpg)
SCT2120AFC
SiC MOSFET rated for 650V with current capability varying from 29 to 220A
![IRFI840GPBF](/files/uploads/product/s/088d16688b2d425dbb30af5ea68f9ecf.webp)
IRFI840GPBF
This MOSFET is packaged in a TO-220F-3 form factor and is compliant with the ROHS directive
![ZXTC2063E6TA](/img/package/sot236.jpg)
ZXTC2063E6TA
ZXTC2063E6TA NPN/PNP Dual-Transistor, SOT23-6, 40V RoHScompatible