IRF1310NSPBF
N-Channel Power MOSFET with 100V Voltage Rating
在庫:7,070
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部品番号 : IRF1310NSPBF
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パッケージ/ケース : TO-252-3
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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日付シート : IRF1310NSPBF データシート (PDF)
概要 IRF1310NSPBF
N-Channel 100 V 42A (Tc) 3.8W (Ta), 160W (Tc) Surface Mount D2PAK
主な特長
- Low voltage drop
- Small input capacitance
- Fast turn-off time
- Suitable for audio applications
応用
- High-power amplifiers
- Grid-tied inverters
- Active harmonic filters
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 42 A | Rds On - Drain-Source Resistance | 36 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 73.3 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 3.8 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 40 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 56 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 45 ns |
Typical Turn-On Delay Time | 11 ns | Width | 6.22 mm |
Part # Aliases | SP001561414 | Unit Weight | 0.011640 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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