FQT4N25TF
N-channel MOSFET Transistor with a current rating of 0.83 A and a voltage rating of 250 V
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $0.463 | $0.46 |
10 | $0.363 | $3.63 |
30 | $0.313 | $9.39 |
100 | $0.265 | $26.50 |
500 | $0.218 | $109.00 |
1000 | $0.204 | $204.00 |
在庫:6,951
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : FQT4N25TF
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パッケージ/ケース : SOT223-4
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Brand : Onsemi
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Components Classification : Single FETs, MOSFETs
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日付シート : FQT4N25TF データシート (PDF)
概要 FQT4N25TF
ON Semiconductor’s FQT4N25TF N-Channel enhancement mode power MOSFET is a testament to the company’s dedication to innovation and excellence. Through the use of their proprietary planar stripe and DMOS technology, this MOSFET offers reduced on-state resistance, superior switching performance, and high avalanche energy strength, making it the perfect choice for applications like switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts
主な特長
- Low inductance design (< 2nH)
- High current rating (Up to 5A)
- Compact size and lightweight construction
応用
- Smart Home Hub
- Security Camera
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Status | Last Shipments | Compliance | PbAHP |
Package Type | SOT-223-4 / TO-261-4 | Case Outline | 318H-01 |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 4000 |
ON Target | N | Channel Polarity | N-Channel |
Configuration | Single | V(BR)DSS Min (V) | 250 |
VGS Max (V) | ±30 | VGS(th) Max (V) | 5 |
ID Max (A) | 0.83 | PD Max (W) | 2.5 |
RDS(on) Max @ VGS = 10 V (mΩ) | 1750 | Qg Typ @ VGS = 10 V (nC) | 4.3 |
Ciss Typ (pF) | 155 | Pricing ($/Unit) | Price N/A |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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