IXFH10N100
247AD ROHS MOSFETs
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $29.722 | $29.72 |
| 210 | $11.861 | $2,490.81 |
| 510 | $11.464 | $5,846.64 |
| 990 | $11.268 | $11,155.32 |
在庫：7,892
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IXFH10N100
-
パッケージ/ケース : TO-247-3
-
Brand : IXYS
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IXFH10N100 データシート (PDF)
概要 IXFH10N100
The N-Channel HiPerFET™ Standard series, featuring the impressive IXFH10N100 product, is a top choice for power MOSFET applications. With its low gate charge and exceptional ruggedness, this MOSFET is perfect for both hard switching and resonant mode operations. Its fast intrinsic diode further enhances its performance, making it a reliable and efficient component for industrial use. Available in various standard packages, including isolated types, this series offers flexibility and convenience for a wide range of applications
主な特長
- High Density Interconnect
- Automotive Grade Reliability
- Surface Mount Package
- Power Cycling Capability
応用
- Robust construction
- Cost-effective solution
- Advanced technology
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Drain-Source Voltage (V) | 1000 | Maximum On-Resistance @ 25 ℃ (Ohm) | 1.2 |
| Continuous Drain Current @ 25 ℃ (A) | 10 | Gate Charge (nC) | 122 |
| Input Capacitance, CISS (pF) | 4000 | Thermal resistance [junction-case] (K/W) | 0.42 |
| Configuration | Single | Package Type | TO-247 |
| Power Dissipation (W) | 298 | Maximum Reverse Recovery (ns) | 250 |
| Sample Request | No |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IXFH88N30P
TO-247AD packaged N-type MOSFET capable of handling up to 300 volts and 88 amperes of current
IXTX200N10L2
High-power N-channel MOSFET with 3-pin configuration and isolated tab
IXFN82N60Q3
IXFN82N60Q3 is a power MOSFET designed for N-channel operation
IXFM50N20
200-volt, 50-ampere MOSFET
IXTM24N50
3-pin TO-204AE Silicon MOSFET in N-channel configuration with maximum ratings of 500V and 24A
IXFR24N50Q
MOSFET IXFR24N50Q featuring 22 Amps, 500V, and a low Rds of 0.23
IXA45IF1200HB
Trans IGBT Chip N-CH 1200V 78A 325W 3-Pin(3+Tab) TO-247 Tube
IXBH16N170
IGBT Transistors with a voltage rating of 1700V and a current handling capacity of 25A
IXBH9N160G
TO-247-3 IGBTs meeting ROHS standards
IXBH42N170
1700V Single IGBT Discrete Diode, TO247 BIMOSFET, 42A
FDD6N50TM
UniFETTM N-Channel Power MOSFET, 500 V, 6 A, 900 mΩ, DPAK
BC33740BU
45V NPN Bipolar Transistors
IRF9388TRPBF
The MOSFET model IRF9388TRPBF is specifically designed for P-channel operation
SI1022R-T1-GE3
MOSFET with a 60V drain-source voltage and a 20V gate-source voltage, packaged in SC75A
IRFR120ZPBF
HEXFET 100V 1 N-Channel MOSFET with 26mOhms and 70nC
IRFZ14PBF
ROHS compliant and suitable for various electronic applications requiring high power handling
NTE283
Robust TO-package withstands harsh environments reliabl
BC337A
High-gain NPN transistor for general-purpose applications
APT75GN120LG
APT75GN120LG IGBT Transistors employ Fieldstop design for enhanced performance at low frequencies
NVTFS5C454NLWFTAG
40V N-channel power MOSFET for automotive applications