G3R20MT17N
N-type silicon carbide metal-oxide-semiconductor field-effect transistor with a current rating of 100A in SOT227 housing
在庫:5,561
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部品番号 : G3R20MT17N
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パッケージ/ケース : SOT-227-4
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Brand : GeneSiC Semiconductor
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Components Classification : Single FETs, MOSFETs
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日付シート : G3R20MT17N データシート (PDF)
概要 G3R20MT17N
N-Channel 1700 V 100A (Tc) 523W (Tc) Chassis Mount SOT-227
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | G3R™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 26mOhm @ 75A, 15V | Vgs(th) (Max) @ Id | 2.7V @ 15mA |
Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 15 V | Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 10187 pF @ 1000 V | Power Dissipation (Max) | 523W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 | Package / Case | SOT-227-4, miniBLOC |
Base Product Number | G3R20 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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