GT20J341
GT20J341: High-performance IGBT Transistors
在庫：9,360
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : GT20J341
-
パッケージ/ケース : TO-220SIS-3
-
Brand : TOSHIBA
-
Components Classification : Single IGBTs
-
日付シート : GT20J341 データシート (PDF)
-
Series : GT20J341
概要 GT20J341
In the realm of power electronics, the GT20J341 power MOSFET stands out as a versatile and robust solution for demanding applications. Designed for high-speed switching tasks, this transistor delivers exceptional performance with its impressive specifications and capabilities. The combination of a 50A maximum continuous drain current, a 600V drain-source voltage, and a low on-resistance of 0.1 ohms make it a reliable choice for power supplies, inverters, and motor controls. Its fast switching speed, characterized by a 35ns rise time and a 20ns fall time, ensures rapid response times and efficient operation
主な特長
- Superb switching performance ensured
- Low noise, high reliability guaranteed
- Precise turn-off characteristics maintained
応用
- Computer peripherals
- Networking equipment
- Barcode scanners
- Point-of-sale systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | Technology | Si |
| Package / Case | TO-220SIS-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
| Collector-Emitter Saturation Voltage | 1.5 V | Maximum Gate Emitter Voltage | - 25 V, + 25 V |
| Continuous Collector Current at 25 C | 20 A | Pd - Power Dissipation | 45 W |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Series | GT20J341 | Brand | Toshiba |
| Continuous Collector Current Ic Max | 80 A | Gate-Emitter Leakage Current | 100 nA |
| Product Type | IGBT Transistors | Subcategory | IGBTs |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
GT15J321
The IGBT Transistors TO220NIS2 are no longer in production since July 2010, phased out by January 2010, and officially obsolete by October 2010
GT30J121
GT30J121 is an N-channel IGBT with a 600V rating and a 30A enhancement capability, packaged in TO3PN
GT30J301
Transistor 30A, 600V, N-Channel IGBT
GT20J101
00V N-Channel IGBT 20A
GT15J301
TRANSISTOR 15 A, 600 V, N-CHANNEL IGBT
GT40Q321
Phase-out: 07-10
GT40QR21
N-channel 1200V 40A IGBT transistor module with TO-3PN package
GT25Q102
Trans IGBT Chip N-CH 1200V 25A 200W 3-Pin(3+Tab) TO-3PL
SIRA00DP-T1-GE3
Vishay SIRA00DP-T1-GE3 N-channel MOSFET Transistor
CPH6354-TL-W
Power Field-Effect Transistor with 4A Drain Current, 60V Voltage Rating, 0
BC856S,115
Trans GP BJT PNP 65V 0.1A 400mW 6-Pin TSSOP T/R
IRFH5007TRPBF
Single N-Channel 75 V 5.9 mOhm 65 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
NVF6P02T3G
Designed for automotive applications, the NVF6P02T3G is a P-channel MOSFET transistor rated for up to 20V and 10A
BC847BPN,115
Trans GP BJT NPN/PNP 45V 0.1A 400mW 6-Pin TSSOP T/R
STP11NM60FP
This MOSFET transistor
MMBT3906T-7-F
Bipolar Junction Transistor General Purpose PNP 40V 0.2A SOT-523 Package
DMC204010R
Description: Embossed Tape and Reel Packaging for a General Purpose NPN Bipolar Junction Transistor with 50V Voltage Rating and 0.1A Current Rating
NVATS5A112PLZT4G
MOSFETs TO-252-3 ROHS