GT30J121
GT30J121 is an N-channel IGBT with a 600V rating and a 30A enhancement capability, packaged in TO3PN
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部品番号 : GT30J121
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パッケージ/ケース : TO-3PN-3
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Brand : TOSHIBA
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Components Classification : Single IGBTs
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日付シート : GT30J121 データシート (PDF)
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Series : GT30J121
概要 GT30J121
The GT30J121 power MOSFET transistor is a reliable and efficient component designed for high-speed switching applications. With a drain-source voltage of 600V and a continuous drain current of 30A, this transistor is capable of handling demanding tasks without compromising on performance. The TO-220AC package it comes in is user-friendly, making installation a breeze
主な特長
- Advanced Thermal Design
- Fast Response Time
- High Surge Current Capability
- Limited ESD Damage
- Precise Temperature Control
応用
- Switching gear
- Audio gear
- Welding systems
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Product Category | IGBT Transistors | Technology | Si |
| Package / Case | TO-3PN-3 | Mounting Style | Through Hole |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Series | GT30J121 |
| Brand | Toshiba | Continuous Collector Current Ic Max | 30 A |
| Height | 19 mm | Length | 15.9 mm |
| Product Type | IGBT Transistors | Subcategory | IGBTs |
| Width | 4.8 mm |
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
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