• packageimg
packageimg

HUF75639G3

MOSFET 56a 100V N-Ch UltraFET .25 Ohm

在庫：9,325

  • 90日間のアフター保証
  • 365日の品質保証
  • 正規品保証
  • 7*24時間サービス検疫

迅速な見積もり

見積もりリクエストを送信してください HUF75639G3 このフォームを使用してください。また、次の電子メールでご連絡いただくこともできます Email: [email protected], 12時間以内に返信させていただきます。

概要 HUF75639G3

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

主な特長

  • 56A, 100V
  • SPICE and SABER Thermal Impedance Models
  • Temperature Compensated PSPICE® and SABER™ Electrical Models
  • Peak Current vs Pulse Width Curve
  • UIS Rating Curve

応用

  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe

仕様

以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 56 A
Rds On - Drain-Source Resistance 25 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 130 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 200 W Channel Mode Enhancement
Tradename UltraFET Series HUF75639G3
Brand onsemi / Fairchild Configuration Single
Fall Time 25 ns Height 20.82 mm
Length 15.87 mm Product Type MOSFET
Rise Time 60 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 20 ns
Typical Turn-On Delay Time 15 ns Width 4.82 mm
Part # Aliases HUF75639G3_NL Unit Weight 0.211644 oz

保証と返品

保証、返品、および追加情報

  • QAと返品ポリシー

    部品の品質保証: 365 日

    返品・返金：90日以内

    返品・交換：90日以内

  • 配送と梱包

    配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。

    部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。

  • 支払い

    たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。

    特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。

25MT060WFAPBF

25MT060WFAPBF

Full-Warp Speed
2SJ626-T1B-A

2SJ626-T1B-A

Automotive-grade Power MOSFETs
IRFL4310PBF

IRFL4310PBF

N-Channel Silicon Transistor MOSFET with 100V Voltage Rating and 2.2A Current Rating
SPP03N60C3

SPP03N60C3

This product, SPP03N60C3, is a 3-pin (with 3+Tab) N-channel MOSFET capable of handling voltages up to 650V and currents of 3
IRF9540SPBF

IRF9540SPBF

P-Channel MOSFET, 19 A, 100 V, 3-Pin D2PAK Vishay IRF9540SPBF
ZDT6790TA

ZDT6790TA

ZDT6790TA: Dual NPN and PNP Bipolar Transistor, 2 Amps, 45/40 Volts, 8-Pin SM
MMBT3906LT3G

MMBT3906LT3G

40 V PNP silicon transistor capable of handling up to 200 mA of current
LM394BH

LM394BH

LM394BH is a semiconductor device utilized as a bipolar transistor in electronic circuits
IXBH16N170A

IXBH16N170A

150 Watt 16 Amp 1.7kV TO-247AD IGBTs ROHS
VN0106N3-G

VN0106N3-G

Characteristics: High voltage handling capability and low resistance