IAUC100N08S5N043ATMA1
Automotive Grade N Channel Power MOSFET
在庫：7,137
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IAUC100N08S5N043ATMA1
-
パッケージ/ケース : TSDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
Series : IAUC100N08S5N043
概要 IAUC100N08S5N043ATMA1
Designed with compactness and durability in mind, the IAUC100N08S5N043ATMA1 is housed in a rugged package that can withstand harsh environments. Its high thermal conductivity and low stray inductance further enhance its reliability, making it an ideal choice for applications where space constraints and system efficiency are paramount
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | MOSFET |
| RoHS | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V | Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 5 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V | Qg - Gate Charge | 56 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
| Series | IAUC100N08 | Brand | Infineon Technologies |
| Configuration | Single | Fall Time | 10 ns |
| Product Type | MOSFET | Rise Time | 4 ns |
| Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time | 8 ns | Part # Aliases | IAUC100N08S5N043 SP001780758 |
| Unit Weight | 0.003966 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
IAUT300N10S5N015ATMA1
Field-effect transistor with a voltage range of 75V to 120V
IAUC100N04S6N028
Automotive Trans MOSFET N-CH 40V 100A with AEC-Q101 Certification
IAUC120N04S6N010
MOSFET with 20V to 40V capability
IAUC100N04S6N015
High-power MOSFET,
IAUC90N10S5N062
75V 120V MOSFET IAUC90N10S5N062 MOSFET
IAUC80N04S6L032
ROHS compliant for environmental friendliness
IAUC120N06S5N017
Utilize these components effectively in various applications
BUK9575-100A
N-Channel Metal-oxide Semiconductor FET
CPH6347-TL-W
High-Power MOSFET
IRFR9220TRPBF
Vishay IRFR9220TRPBF P-channel MOSFET Transistor, 3.6 A, -200 V, 3-Pin TO-252
SI4425BDY-T1-E3
The MOSFET has a low on-resistance of 12mΩ at 11.4A and is capable of handling up to 1.5W power dissipation at 10V
IRF630NPBF
MOSFET with a voltage rating of 200V, a current rating of 9.5A, a resistance of 300mOhm, and a charge of 23.3nC
SIHG22N60E-GE3
SIHG22N60E-GE3 MOSFET: Featuring 600V Vds and 30V Vgs, encapsulated in a TO-247AC package
MTM861270LBF
Large Body Field-Effect Transistor for Mobile Technology Manager
SPD02N60C3
N-channel 600V 1.8A Power MOSFET with DPAK packaging
2SK1582-T1B-A
Automotive-grade Power MOSFETs
BC847CWT1G
NPN bipolar junction transistor, automotive-grade, with a maximum voltage rating of 45V and a current rating of 0