BSC014N04LSIATMA1
BSC014N04LSIATMA1 - Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount":
在庫:9,868
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : BSC014N04LSIATMA1
-
パッケージ/ケース : TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
日付シート : BSC014N04LSIATMA1 データシート (PDF)
-
Series : BSC014N04LSI
概要 BSC014N04LSIATMA1
Product BSC014N04LSIATMA1 is part of a new 40V and 60V product family that offers the industry's lowest R DS(on) as well as exceptional switching performance for fast switching applications. With advanced thin wafer technology, this product achieves a 15% lower R DS(on) and a 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDSON-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 40 V | Id - Continuous Drain Current | 100 A |
Rds On - Drain-Source Resistance | 1.2 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 77 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 96 W | Channel Mode | Enhancement |
Tradename | OptiMOS | Series | OptiMOS 5 |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 11 ns | Forward Transconductance - Min | 110 S |
Height | 1.27 mm | Length | 5.9 mm |
Product Type | MOSFET | Rise Time | 50 ns |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 55 ns |
Typical Turn-On Delay Time | 16 ns | Width | 5.15 mm |
Part # Aliases | BSC014N04LSI SP000953212 | Unit Weight | 0.004180 oz |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![BSP315PH6327XTSA1](/files/uploads/product/s/ebd9f8bebc2d4ce3bf45948f9fbebd2b.webp)
BSP315PH6327XTSA1
X7R 10% Soft Term Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.022uF 250volt
![BSC0702LS](/files/uploads/product/s/dd7f090a47eb413fb8d477d80afa4d7f.webp)
BSC0702LS
This MOSFET has a low on-state resistance of 2.3mΩ at 10V, 50A and a threshold voltage of 2.3V at 49uA
![BSM50GP60](/files/uploads/product/s/c53226944c6141b3b9e5045b0301ef7d.webp)
BSM50GP60
High-power transistor for demanding applications
![BSC010N04LS6ATMA1](/img/package/son8.jpg)
BSC010N04LS6ATMA1
BSC010N04LS6ATMA1 Trans MOSFET N-CH 40V 40A 8-Pin TDSON EP T/R
![BSC010N04LSATMA1](/img/package/son8.jpg)
BSC010N04LSATMA1
High-performance MOSFET featuring an N-type channel
![BSC010N04LSIATMA1](/img/package/son8.jpg)
BSC010N04LSIATMA1
N-channel MOSFET transistor designed for switching applications with a maximum voltage rating of 40V and current handling capacity of 37A
![BSC010NE2LSATMA1](/img/package/son8.jpg)
BSC010NE2LSATMA1
BSC010NE2LSATMA1 is a high-power N-channel MOSFET transistor with 8 pins in a TDSON EP package, capable of handling up to 39A of current at 25V
![BSC011N03LSATMA1](/img/package/son8.jpg)
BSC011N03LSATMA1
OptiMOS Power Mosfet with low on-resistance and high conduction capability
![BSC014N06NSATMA1](/img/package/son8.jpg)
BSC014N06NSATMA1
High-power TDSON-8 MOSFET with N-channel 60V 100A
![PMBT3906,235](/img/package/sot23.jpg)
PMBT3906,235
Trans GP BJT PNP 40V 0.2A 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
![SI4840BDY-T1-GE3](/img/package/soic8.jpg)
SI4840BDY-T1-GE3
SI4840BDY-T1-GE3 is a MOSFET with 40V Vds and 20V Vgs
![SQ2348ES-T1-GE3](/img/package/to-3.jpg)
SQ2348ES-T1-GE3
SMALL SIGNAL, FET
![BSC014N04LSATMA1](/img/package/son8.jpg)
BSC014N04LSATMA1
MOSFET N-channel 40V 100A TDSON-8 FL OptiMOS
![IRFP3006PBF](/img/package/to247.jpg)
IRFP3006PBF
IRFP3006PBF TO-247 MOSFETs ROHS
![APT10M07JVR](/img/package/sot.jpg)
APT10M07JVR
Microchip Technology's APT10M07JVR
![DDTC114YCA-7-F](/img/package/sot23.jpg)
DDTC114YCA-7-F
Featuring NPN polarity, the DDTC114YCA-7-F is a Trans Digital Bipolar Junction Transistor (BJT) ideal for digital circuitry
![IRG4BC20F](/img/package/to220.jpg)
IRG4BC20F
IGBT Transistor Chip N-Type 600V 16A 60mW 3-Pin TO-220AB Tube
![2SK2420](/img/package/llp.jpg)
2SK2420
30A I(D), 60V, 0.028ohm
![IRFS4310ZPBF](/img/package/d2pak.jpg)
IRFS4310ZPBF
High-performance N-channel MOSFET suitable for various applications