IGD06N60T
ROHS Compliant TO-252-3 IGBTs
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.165 | $1.16 |
| 200 | $0.452 | $90.40 |
| 500 | $0.436 | $218.00 |
| 1000 | $0.429 | $429.00 |
在庫：6,558
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
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部品番号 : IGD06N60T
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パッケージ/ケース : TO-252-3
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Brand : INFINEON
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Components Classification : Single IGBTs
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日付シート : IGD06N60T データシート (PDF)
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Series : IGD06N60
概要 IGD06N60T
The IGD06N60T MOSFET by Infineon Technologies is a versatile semiconductor device, ideal for various power electronic applications. With its impressive specifications, such as a 600V drain-source voltage rating and 6A continuous drain current rating, this MOSFET delivers high performance and reliability in demanding scenarios. Its low on-state resistance of 0.8 ohms minimizes power losses, enhancing efficiency in power-hungry applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Manufacturer | Infineon | Product Category | IGBT Transistors |
| RoHS | Details | Technology | Si |
| Package / Case | TO-252-3 | Mounting Style | SMD/SMT |
| Configuration | Single | Collector- Emitter Voltage VCEO Max | 600 V |
| Maximum Gate Emitter Voltage | - 20 V, 20 V | Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 150 C | Series | IGD06N60 |
| Brand | Infineon Technologies | Continuous Collector Current Ic Max | 12 A |
| Height | 2.3 mm | Length | 6.5 mm |
| Product Type | IGBT Transistors | Factory Pack Quantity | 2500 |
| Subcategory | IGBTs | Width | 6.22 mm |
| Part # Aliases | IGD6N6TXT IGD06N60TBUMA1 | Unit Weight | 0.139332 oz |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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