IGT60R190D1SATMA1
Trans JFET N-CH 600V 12.5A GaN
在庫：7,703
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部品番号 : IGT60R190D1SATMA1
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パッケージ/ケース : 8-PowerSFN
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IGT60R190D1SATMA1 データシート (PDF)
概要 IGT60R190D1SATMA1
The IGT60R190D1SATMA1 transistor by Infineon Technologies is a technological marvel that combines power, efficiency, and reliability in one compact package. Its gallium nitride (GaN) technology allows it to operate at frequencies ranging from 2.5 to 6.0 GHz, making it suitable for a wide range of applications in the fields of radar, communication, and electronic warfare. With a pulse width of 100 µs and a duty cycle of 10%, this transistor can deliver impressive pulsed output power of up to 1200 W without compromising on performance. Its robust design and high power density of 1000 W ensure that it can handle even the most demanding of tasks, making it a standout choice for high-power applications
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | CoolGaN™ | Package | Tape & Reel (TR) |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) | Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) | Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Vgs (Max) | -10V | Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
| Power Dissipation (Max) | 55.5W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN | Base Product Number | IGT60R190 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
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部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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