IKW25N120H3
TO-247 Tube package with 3 pins and a tab for easy mounting and connection
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $2.998 | $3.00 |
10 | $2.878 | $28.78 |
30 | $2.460 | $73.80 |
90 | $2.387 | $214.83 |
480 | $2.353 | $1,129.44 |
960 | $2.339 | $2,245.44 |
在庫:7,146
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IKW25N120H3
-
パッケージ/ケース : TO-247-3
-
Brand : Infineon
-
Components Classification : Single IGBTs
-
日付シート : IKW25N120H3 データシート (PDF)
-
Series : TRENCHSTOP IGBT4
概要 IKW25N120H3
The IKW25N120H3 IGBT module by Infineon Technologies is a standout choice for industrial applications that demand both high performance and efficiency. With a voltage rating of 1200V and a current rating of 25A, this module is versatile and can be utilized in a wide range of power electronic systems. Its key feature of low conduction and switching losses ensures high efficiency and reduced heat generation, making it ideal for energy-efficient applications like industrial motor drives and UPS systems. The module's rugged and reliable design, featuring a ceramic substrate for excellent thermal performance and mechanical strength, guarantees long-term stability and top-notch performance in challenging operating conditions. Moreover, the IKW25N120H3 module is easy to install and integrate into existing systems, thanks to its compact and robust design. Additionally, it comes equipped with built-in protection mechanisms such as short-circuit protection and overcurrent protection, ensuring safe and reliable operation at all times
主な特長
- High-speed and high-power IGBT module for demanding applications
- Excellent thermal performance and reliability
- Suitable for industrial, commercial and residential use
- Low noise and vibration during operation guaranteed
- Easy installation and maintenance design
応用
- Smart control
- Integrated circuits
- Low noise operation
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
IC max | 50.0 A | ICpuls max | 100.0 A |
IF max | 25.0 A | IFpuls max | 100.0 A |
VCE max | 1200.0 V | Switching Frequency max | 100.0 kHz |
Switching Frequency min | 20.0 kHz | Package | TO-247-3 |
Switching Frequency | HighSpeed3 20-100 kHz | Technology | IGBT HighSpeed 3 |
Ptot max | 326.0 W |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
![IKP20N60TXKSA1](/img/package/to220.jpg)
IKP20N60TXKSA1
Overview of IKP20N60TXKSA1: A member of the IKP20N60T Series, featuring 600V 41A Through Hole IGBT TrenchStop technology in a PG-TO-220-3 housing
![IKW40N120H3FKSA1](/img/package/to247.jpg)
IKW40N120H3FKSA1
High Power Transistors
![IKW75N60H3](/img/package/to247.jpg)
IKW75N60H3
600V IGBT capable of handling currents up to 75A, featuring a low forward voltage of 2.0V, presented in TO247-3 package
![IKQ75N120CH3XKSA1](/img/package/to247.jpg)
IKQ75N120CH3XKSA1
IGBT Transistor with 1.2kV Voltage Rating, 75A Current, and 256W Power Dissipation in TO247-3 Package
![IKQ120N60TXKSA1](/img/package/to247.jpg)
IKQ120N60TXKSA1
Trans IGBT Chip N-Channel 600V 160A 833W TO-247
![IKW50N65F5FKSA1](/img/package/to247.jpg)
IKW50N65F5FKSA1
CH 650V 80A 305W 3-Pin ~24J5000W30420AJHGIBT
![IKW20N60T](/img/package/to247.jpg)
IKW20N60T
Insulated Gate Bipolar Transistor with 650V voltage rating, 20A current rating, and 1.5V threshold voltage in TO247-3 package
![IKW50N65ET7](/img/package/to247.jpg)
IKW50N65ET7
High-performance power semiconductor device
![IKW50N65F5](/img/package/to247.jpg)
IKW50N65F5
Trans IGBT Chip
![IKW40N65F5](/img/package/to247.jpg)
IKW40N65F5
Description: N-channel Insulated Gate Bipolar Transistor (IGBT) chip
![BSZ160N10NS3GATMA1](/img/package/son8.jpg)
BSZ160N10NS3GATMA1
N-channel MOSFET with a maximum voltage rating of 100V and a current rating of 40A, packaged in TSDSON-8 OptiMOS 3 configuration
![IRC540PBF](/img/package/to220.jpg)
IRC540PBF
28-amp N-channel MOSFET designed to operate under 100 volts
![2SC5287](/img/package/to-3.jpg)
2SC5287
Power Bipolar Transistor 2SC5287
![IPP60R180P7XKSA1](/img/package/to220.jpg)
IPP60R180P7XKSA1
High-voltage N-channel MOSFET transistor in TO-220 package with 3 pins (3+tab)
![BSM15GP60](/img/package/module.jpg)
BSM15GP60
The BSM15GP60 module is a high-performance IGBT solution with a voltage rating of 600V and a current handling capability of 15A
![TIP100G](/img/package/to220.jpg)
TIP100G
NPN Silicon Power Bipolar Transistor rated at 8A Collector Current and 60V Collector-Emitter Breakdown Voltage, housed in TO-220AB Package
![S2SC4617G](/img/package/sc75.jpg)
S2SC4617G
NPN Bipolar Transistor
![VMO1200-01F](/img/product.png)
VMO1200-01F
Featuring 100V maximum voltage rating and 12A continuous current capacity
![IXFN132N50P3](/img/package/sot.jpg)
IXFN132N50P3
SOT-227B package containing a high-power MOSFET transistor
![NVTFS5C658NLTAG](/img/package/dfn8.jpg)
NVTFS5C658NLTAG
8-Pin WDFN EP T/R