IMW120R045M1XKSA1
N-channel MOSFET transistor capable of handling up to 1.2 kilovolts and 52 amperes in a TO-247 package
数量 | 単価(USD) | 合計金額 |
---|---|---|
1 | $17.813 | $17.81 |
200 | $6.893 | $1,378.60 |
500 | $6.651 | $3,325.50 |
1000 | $6.532 | $6,532.00 |
在庫:5,008
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
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部品番号 : IMW120R045M1XKSA1
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パッケージ/ケース : TO-247-3
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Brand : Infineon Technologies
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Components Classification : Single FETs, MOSFETs
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日付シート : IMW120R045M1XKSA1 データシート (PDF)
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Series : IMW120R045M1
概要 IMW120R045M1XKSA1
The IMW120R045M1XKSA1 power module is a top-of-the-line product from Infineon Technologies, known for its high-quality semiconductor solutions. This module, belonging to the Easy 1B family, is engineered for high-frequency operation in various power electronics applications. With a nominal current rating of 120A and a maximum voltage rating of 450V, it is perfectly suited for medium-power applications. Its integrated power module with a single switch configuration simplifies design and reduces overall system size, making it an efficient and space-saving solution
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
Series | CoolSiC™ | Package | Tube |
Product Status | Not For New Designs | FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V | Vgs(th) (Max) @ Id | 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 15 V | Vgs (Max) | +20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 800 V | Power Dissipation (Max) | 228W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3-41 | Package / Case | TO-247-3 |
Base Product Number | IMW120 |
保証と返品
保証、返品、および追加情報
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QAと返品ポリシー
部品の品質保証: 365 日
返品・返金:90日以内
返品・交換:90日以内
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配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
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