IMW120R060M1HXKSA1
CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET
在庫：6,335
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IMW120R060M1HXKSA1
-
パッケージ/ケース : TO-247-3
-
Brand : Infineon Technologies
-
Components Classification : Single FETs, MOSFETs
-
日付シート : IMW120R060M1HXKSA1 データシート (PDF)
-
Series : IMW120R060M1H
概要 IMW120R060M1HXKSA1
The IMW120R060M1HXKSA1 MOSFET is a cutting-edge semiconductor device tailored for high-power applications. Boasting a maximum drain source voltage of 1.2kV and a continuous drain current rating of 36A, this N-channel transistor offers excellent performance and reliability. Its low on resistance of 0.06ohm ensures efficient power delivery, while the maximum power dissipation of 150W allows for sustained operation under heavy loads. The TO-247 case style provides secure mounting options for various electronics projects, with the transistor capable of withstanding temperatures up to 175°C
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| Series | CoolSiC™ | Package | Tube |
| Product Status | Active | FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) | Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 13A, 18V | Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 18 V | Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V | Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 | Package / Case | TO-247-3 |
| Base Product Number | IMW120 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
AIMBG120R010M1XTMA1
Silicon Carbide MOSFET with N-Channel, Single Configuration, rated at 205 Amps and 1
IMBF170R450M1XTMA1
1.7kV MOSFET with 9.8A current rating
PIMN31,115
SC-74 Digital Transistors PIMN31
IMW65R027M1HXKSA1
MOSFET utilizing Silicon Carbide
PIMC31,115
Trans Digital BJT NPN/PNP 50V 0.5mA 420mW Automotive AEC-Q101 6-Pin TSOP T/R
IMZA65R027M1H
Tube packaging containing a 4-pin TO-247 N-channel SiC MOSFET rated at 650V and 59A
DMT6016LFDF-7
Enhancement mode Field-Effect Transistor with 60V drain-source voltage
NTTFS4C05NTAG
High-speed switching, low voltage drop N-channel MOSFET for reliable power contro
2SK3050
High-Power N-Type MOSFET
SPW20N60S5FKSA1
The SPW20N60S5FKSA1 is a three-pin device (with a tab) utilized for electronic switching purposes
IXFH36N60P
600V N-channel MOSFET with 36A current handling capacity
SQJ422EP-T1-GE3
VISHAY - SQJ422EP-T1-GE3 - MOSFET, N-CH, 40V, 75A, PPAKSO8L
PDTC114EE,115
Pre-Biased Bipolar Transistors with Trans Ret Tape-7
IRF9Z24PBF
MOSFET P-CH -60V HEXFET MOSFET
BSP149H6327XTSA1
Ruggedized transistor suitable for harsh industrial and automotive environment
DMP6180SK3-13
60V P-channel MOSFET