IPD110N12N3GATMA1
N-Channel, Silicon
| 数量 | 単価(USD) | 合計金額 |
|---|---|---|
| 1 | $1.903 | $1.90 |
| 10 | $1.675 | $16.75 |
| 30 | $1.533 | $45.99 |
| 100 | $1.196 | $119.60 |
| 500 | $1.131 | $565.50 |
| 1000 | $1.104 | $1,104.00 |
在庫：7,410
- 90日間のアフター保証
- 365日の品質保証
- 正規品保証
- 7*24時間サービス検疫
-
部品番号 : IPD110N12N3GATMA1
-
パッケージ/ケース : PG-TO252-3
-
ブランド : Infineon
-
コンポーネントの分類 : Single FETs, MOSFETs
-
日付シート : IPD110N12N3GATMA1 データシート (PDF)
-
Series : IPD110N12N3-G
概要 IPD110N12N3GATMA1
With its OptiMOS 5 family pedigree, the IPD110N12N3GATMA1 stands out as a top-notch N-channel power MOSFET from Infineon Technologies. Its low on-resistance, high system efficiency, and low gate charge combine to deliver exceptional performance in a compact TO-252 package. And with its RoHS compliance, this MOSFET is not only powerful but also environmentally conscious, meeting the needs of modern regulatory standards
主な特長
- Efficient energy storage solutions
- High-reliability motor control systems
- Smart grid infrastructure development
応用
- Revolutionizing the automotive industry
- Pioneering industrial automation solutions
- Innovative power in solar energy
仕様
以下は、選択された部品の特性やカテゴリーに関する基本的なパラメータである。
| functionalPacking | TAPE & REEL | addProductInfo | MS, RoHS compliant, non dry |
| packageNameMarketing | DPAK | msl | 1 |
| halogenFree | yes | customerInfo | STANDARD |
| fgr | N59 | productClassification | COM |
| productStatusInfo | active | hfgr | A |
| packageName | PG-TO252-3 | pbFree | yes |
| moistureProtPack | NON DRY | orderingCode | SP001127808 |
| fourBlockPackageName | PG-TO252-3-313 | rohsCompliant | yes |
| opn | IPD110N12N3GATMA1 | completelyPbFree | no |
| sapMatnrSali | SP001127808 |
保証と返品
保証、返品、および追加情報
-
QAと返品ポリシー
部品の品質保証: 365 日
返品・返金：90日以内
返品・交換：90日以内
-
配送と梱包
配送: たとえば、FedEx、JP、UPS、DHL、SAGAWA、YTC など。
部品パッケージ保証: 100% ESD 帯電防止機能を備えた当社のパッケージは、高い強度と優れた緩衝機能を備えています。
-
支払い
たとえば、VISA、MasterCard、Western Union、PayPal、MoneyGram、楽天ペイなどのチャネルです。
特定の支払いチャネルの好みや要件がある場合は、当社の営業チームにご連絡ください。
IPD25N06S4L-30
Transistor MOSFET N-Channel 60V 25A for Automotive Use
IPB042N10N3GATMA1
MOSFET N-Ch 100V 100A D2PAK -2 OptiMOS 3
IPB044N15N5ATMA1
Transistor, N-channel MOSFET with 150V voltage and 174A current rating in a 7-pin D2PAK package
IPC100N04S51R9ATMA1
40V N-Channel Transistor for Automotive Use, 100A, 8-Pin TDSON EP Package, Tape and Reel
IPC100N04S51R2ATMA1
Product IPC100N04S51R2ATMA1, labeled as MOSFET_(20V 40V), serves as a high-performance semiconductor device for voltage regulation and control
IPD053N08N3GATMA1
MOSFET with Trench technology for 40-100V voltage range
IPD100N04S402ATMA1
Trans MOSFET N-CH 40V 100A Automotive
IPB017N10N5ATMA1
Available in Tape and Reel packaging for easy storage and handling
IPB020N10N5ATMA1
This MOSFET is an N-channel type suitable for high-power applications
IPB020N10N5LFATMA1
Low RDS(on) and wide safe operating area in PG-TO263-3 package, RoHS compliant
IRG4PC30KD
IRG4PC30KD IGBT 28A TO247
BTA16-800BW3G
3-Pin BTA16-800BW3G
IRFBA22N50A
N-Channel TO-273AA Super-220
ZXMN6A07F
Enhancement Mode N-Channel MOSFET
TSM2312CX
TSM2312CX power MOSFET
DCX124EK-7-F
Dual-channel silicon transistor capable of handling 30 mA and 50 V, with NPN and PNP compatibility
FDP075N15A-F102
N Channel MOSFET
NTMD5838NLR2G
Dual N-Channel MOSFET designed for high power applications with a 40V breakdown voltage and 8.9A continuous drain current
SI2302-TP
The SI2302-TP is a N-channel MOSFET that can handle up to 20V and 3A, with a typical on-resistance of 8.5 ohms
DMC3025LSD-13
Diodes Inc DMC3025LSD-13 Dual N/P-channel MOSFET Transistor, 8-Pin SOIC